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  1. 2019

  2. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma

    Aksenov, M. S., Gutakovskii, A. K., Prosvirin, I. P., Dmitriev, D. V., Nedomolkina, A. A. & Valisheva, N. A., 1 Nov 2019, In: Materials Science in Semiconductor Processing. 102, 5 p., 104611.

    Research output: Contribution to journal › Article › peer-review

  3. High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

    Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M. & Chistokhin, I. B., 1 Jul 2019, In: Technical Physics Letters. 45, 7, p. 739-741 3 p.

    Research output: Contribution to journal › Article › peer-review

  4. About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts

    Aksenov, M. S., Valisheva, N. A., Chistokhin, I. B., Dmitriev, D. V., Kozhukhov, A. S. & Zhuravlev, K. S., 3 Jun 2019, In: Applied Physics Letters. 114, 22, 5 p., 221602.

    Research output: Contribution to journal › Article › peer-review

  5. High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

    Zhuravlev, K. S., Valisheva, N. A., Aksenov, M. S., Dmitriev, D. D., Toropov, A. I., Chistokhin, I. B., Gilinsky, A. M., Protasov, D. Y., Malyshev, S. A., Chizh, A. L. & Mikitchuk, K. B., 1 May 2019, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2 p. 8803902. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  6. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

    Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I. & Zhuravlev, K. S., 1 Feb 2019, In: Technical Physics Letters. 45, 2, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

  7. 2018

  8. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E. & Valisheva, N. A., 7 May 2018, In: Journal of Applied Physics. 123, 17, 6 p., 173901.

    Research output: Contribution to journal › Article › peer-review

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