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Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.mssp.2019.104611
Final published version

M. S. Aksenov
A. K. Gutakovskii
I. P. Prosvirin
D. V. Dmitriev
A. A. Nedomolkina
N. A. Valisheva

Original language	English
Article number	104611
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	102
DOIs	https://doi.org/10.1016/j.mssp.2019.104611
Publication status	Published - 1 Nov 2019

Research areas

OXIDATION, PASSIVATION, INSULATOR, OXIDES

OECD FOS+WOS

ID: 20779348