High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures › Research Explorer

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High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

DOI

https://doi.org/10.1109/IEEE-IWS.2019.8803902
Final published version

K. S. Zhuravlev
N. A. Valisheva
M. S. Aksenov
D. D. Dmitriev
A. I. Toropov
I. B. Chistokhin
A. M. Gilinsky
D. Y. Protasov
S. A. Malyshev
A. L. Chizh
K. B. Mikitchuk

Original language	English
Title of host publication	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	2
ISBN (Electronic)	9781728107165
DOIs	https://doi.org/10.1109/IEEE-IWS.2019.8803902
Publication status	Published - 1 May 2019
Event	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Guangzhou, China Duration: 19 May 2019 → 22 May 2019

Publication series

Name	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

Conference

Conference	2019 IEEE MTT-S International Wireless Symposium, IWS 2019
Country/Territory	China
City	Guangzhou
Period	19.05.2019 → 22.05.2019

Research areas

1.55 μm, I-V, InAlAs/InGaAs/InP, microwave photodiode, microwave power, sensitivity, 1.55 mu m

ID: 21469718