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  1. 2023

  2. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts

    Aksenov, M. S., Genze, I. Y., Chistokhin, I. B., Zakirov, E. R., Dmitriev, D. V., Zhuravlev, K. S., Gutakovskii, A. K., Golyashov, V. A. & Tereshchenko, O. E., Jul 2023, In: Surfaces and Interfaces. 39, 102920.

    Research output: Contribution to journal › Article › peer-review

  3. 2022

  4. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

    Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P. & Gutakovskii, A. K., 28 Feb 2022, In: Journal of Applied Physics. 131, 8, 085301.

    Research output: Contribution to journal › Article › peer-review

  5. 2021

  6. High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

    Zhuravlev, K. S., Gilinskii, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L. & Mikitchuk, K. B., Sept 2021, In: Technical Physics. 66, 9, p. 1072-1077 6 p., 34.

    Research output: Contribution to journal › Article › peer-review

  7. Optical properties of native (anodic) layer on the InAlAs surface of different morphology

    Valisheva, N. A., Kruchinin, V. N., Aksenov, M. S., Azarov, I. A. & Nedomolkina, A. A., 30 Jun 2021, In: Thin Solid Films. 728, 138692.

    Research output: Contribution to journal › Article › peer-review

  8. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

    Aksenov, M. S., Valisheva, N. A. & Kovchavtsev, A. P., Jun 2021, In: Technical Physics Letters. 47, 6, p. 478-481 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. 2020

  10. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

    Kovchavtsev, A. P., Aksenov, M. S., Nastov’yak, A. E., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y. & Dmitriev, D. V., 1 May 2020, In: Technical Physics Letters. 46, 5, p. 469-472 4 p.

    Research output: Contribution to journal › Article › peer-review

  11. 2019

  12. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma

    Aksenov, M. S., Gutakovskii, A. K., Prosvirin, I. P., Dmitriev, D. V., Nedomolkina, A. A. & Valisheva, N. A., 1 Nov 2019, In: Materials Science in Semiconductor Processing. 102, 5 p., 104611.

    Research output: Contribution to journal › Article › peer-review

  13. High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

    Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M. & Chistokhin, I. B., 1 Jul 2019, In: Technical Physics Letters. 45, 7, p. 739-741 3 p.

    Research output: Contribution to journal › Article › peer-review

  14. About the nature of the barrier inhomogeneities at Au/Ti/n-InAlAs(001) Schottky contacts

    Aksenov, M. S., Valisheva, N. A., Chistokhin, I. B., Dmitriev, D. V., Kozhukhov, A. S. & Zhuravlev, K. S., 3 Jun 2019, In: Applied Physics Letters. 114, 22, 5 p., 221602.

    Research output: Contribution to journal › Article › peer-review

  15. High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

    Zhuravlev, K. S., Valisheva, N. A., Aksenov, M. S., Dmitriev, D. D., Toropov, A. I., Chistokhin, I. B., Gilinsky, A. M., Protasov, D. Y., Malyshev, S. A., Chizh, A. L. & Mikitchuk, K. B., 1 May 2019, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2 p. 8803902. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

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