Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance › Research Explorer

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Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1063/1.5018670
Final published version

A. P. Kovchavtsev
M. S. Aksenov
A. V. Tsarenko
A. E. Nastovjak
A. G. Pogosov
D. A. Pokhabov
O. E. Tereshchenko
N. A. Valisheva

Original language	English
Article number	173901
Number of pages	6
Journal	Journal of Applied Physics
Volume	123
Issue number	17
DOIs	https://doi.org/10.1063/1.5018670
Publication status	Published - 7 May 2018

OECD FOS+WOS

Research areas

SURFACE, PASSIVATION

ID: 13333020