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  1. 2024

  2. Effect of Annealing on the Lateral Homogeneity of Ti/InAlAs Schottky Barriers

    Genze, I. Y., Aksenov, M. S. & Dmitriev, D. V., 14 Oct 2024, In: Bulletin of the Russian Academy of Sciences: Physics. 88, 9, p. 1485-1489 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

    Stepina, N. P., Bazhenov, A. O., Shumilin, A. V., Zhdanov, E. Y., Ishchenko, D. V., Kirienko, V. V., Aksenov, M. S. & Tereshchenko, O. E., 17 Sept 2024, In: JETP Letters. 120, 3, p. 199-204 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. Effect of Annealing on the Chemical Composition of the Pt/InAlAs Interface

    Genze, I. Y., Aksenov, M. S., Paramonova, M. A., Zakirov, E. R. & Dmitriev, D. V., 2024, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 30-33 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  5. Electrophysical Properties and Thermal Stability of Pt/InAlAs Schottky Barrier Diodes

    Paramonova, M. A., Genze, I. Y., Aksenov, M. S. & Dmitriev, D. V., 2024, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 210-213 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  6. 2023

  7. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts

    Aksenov, M. S., Genze, I. Y., Chistokhin, I. B., Zakirov, E. R., Dmitriev, D. V., Zhuravlev, K. S., Gutakovskii, A. K., Golyashov, V. A. & Tereshchenko, O. E., Jul 2023, In: Surfaces and Interfaces. 39, 102920.

    Research output: Contribution to journal › Article › peer-review

  8. 2022

  9. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

    Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P. & Gutakovskii, A. K., 28 Feb 2022, In: Journal of Applied Physics. 131, 8, 085301.

    Research output: Contribution to journal › Article › peer-review

  10. 2021

  11. High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

    Zhuravlev, K. S., Gilinskii, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L. & Mikitchuk, K. B., Sept 2021, In: Technical Physics. 66, 9, p. 1072-1077 6 p., 34.

    Research output: Contribution to journal › Article › peer-review

  12. Optical properties of native (anodic) layer on the InAlAs surface of different morphology

    Valisheva, N. A., Kruchinin, V. N., Aksenov, M. S., Azarov, I. A. & Nedomolkina, A. A., 30 Jun 2021, In: Thin Solid Films. 728, 138692.

    Research output: Contribution to journal › Article › peer-review

  13. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

    Aksenov, M. S., Valisheva, N. A. & Kovchavtsev, A. P., Jun 2021, In: Technical Physics Letters. 47, 6, p. 478-481 4 p.

    Research output: Contribution to journal › Article › peer-review

  14. 2020

  15. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

    Kovchavtsev, A. P., Aksenov, M. S., Nastov’yak, A. E., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y. & Dmitriev, D. V., 1 May 2020, In: Technical Physics Letters. 46, 5, p. 469-472 4 p.

    Research output: Contribution to journal › Article › peer-review

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