1. 2017
  2. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

    Zhuravlev, A. G. & Alperovich, V. L., 15 Feb 2017, In: Applied Surface Science. 395, p. 3-8 6 p.

    Research output: Contribution to journalArticlepeer-review

  3. Ultrafast energy- and momentum-resolved surface Dirac photocurrents in the topological insulator Sb2Te3

    Kuroda, K., Reimann, J., Kokh, K. A., Tereshchenko, O. E., Kimura, A., Güdde, J. & Höfer, U., 2 Feb 2017, In: Physical Review B. 95, 8, 5 p., 081103.

    Research output: Contribution to journalArticlepeer-review

  4. ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

    Zinovieva, A. F., Zinovyev, V. A., Nenashev, A. V., Kulik, L. V. & Dvurechenskii, A. V., 1 Feb 2017, In: Zeitschrift fur Physikalische Chemie. 231, 2, p. 405-423 19 p.

    Research output: Contribution to journalArticlepeer-review

  5. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Feb 2017, In: Semiconductors. 51, 2, p. 203-206 4 p.

    Research output: Contribution to journalArticlepeer-review

  6. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journalArticlepeer-review

  7. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

    Sitnikov, S. V., Latyshev, A. V. & Kosolobov, S. S., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 196-201 6 p.

    Research output: Contribution to journalArticlepeer-review

  8. AlInAs quantum dots

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, In: JETP Letters. 105, 2, p. 103-109 7 p.

    Research output: Contribution to journalArticlepeer-review

  9. Atomic Processes on the Silicon Surface

    Latyshev, A. V., Fedina, L. I., Kosolobov, S. S., Sitnikov, S. V., Rogilo, D. I., Rodyakina, E. E., Nasimov, D. A., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 189-221 33 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  10. Atomic Structure of Semiconductor Low-Dimensional Heterosystems

    Gutakovskii, A. K., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 223-253 31 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  11. Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

    Zhdanov, E. Y., Pogosov, A. G., Budantsev, M. V., Pokhabov, D. A. & Bakarov, A. K., 1 Jan 2017, In: Semiconductors. 51, 1, p. 8-13 6 p.

    Research output: Contribution to journalArticlepeer-review

  12. Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 265-270 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  13. Electron Transport: From Nanostructures to Nanoelectromechanical Systems

    Pogosov, A. G., Budantsev, M. V., Shevyrin, A. A., Zhdanov, E. Y. & Pokhabov, D. A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 101-129 29 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  14. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

    Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 255-277 23 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  15. Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography

    Utkin, D., Shklyev, A., Tsarev, A., Latyshev, A. & Nasimov, D., 1 Jan 2017, In: Physics Procedia. 86, p. 127-130 4 p.

    Research output: Contribution to journalConference articlepeer-review

  16. Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

    Tkachenko, O. A., Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 131-155 25 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  17. Oxygen polyvacancies as conductive filament in zirconia: First principle simulation

    Perevalov, T. V. & Islamov, D. R., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 357-362 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  18. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  19. Preface

    Latyshev, A. V., Dvurechenskii, A. V. & Aseev, A. L., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc., p. xxiii-xxiv (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingForeword/postscriptResearchpeer-review

  20. Silicon-Based Nanoheterostructures With Quantum Dots

    Dvurechenskii, A. V. & Yakimov, A. I., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 59-99 41 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  21. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures

    Shklyaev, A. A., Romanyuk, K. N., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 325-344 20 p. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

ID: 3084764