1 - 10 out of 98Page size: 10
Sort by: Type
  1. Article › Research › Peer-reviewed

  2. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journal › Article › peer-review

  3. AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime

    Dmitriev, A. A., Drichko, I. L., Smirnov, I. Y., Bakarov, A. K. & Bykov, A. A., 1 Jul 2019, In: JETP Letters. 110, 1, p. 68-73 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. AlInAs quantum dots

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, In: JETP Letters. 105, 2, p. 103-109 7 p.

    Research output: Contribution to journal › Article › peer-review

  5. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

    Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P. & Gutakovskii, A. K., 28 Feb 2022, In: Journal of Applied Physics. 131, 8, 085301.

    Research output: Contribution to journal › Article › peer-review

  6. Aluminum-induced crystallization of silicon suboxide thin films

    Zamchiy, A. O., Baranov, E. A., Khmel, S. Y., Volodin, V. A., Vdovin, V. I. & Gutakovskii, A. K., 1 Sept 2018, In: Applied Physics A: Materials Science and Processing. 124, 9, 4 p., 646.

    Research output: Contribution to journal › Article › peer-review

  7. Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts

    Aksenov, M. S., Genze, I. Y., Chistokhin, I. B., Zakirov, E. R., Dmitriev, D. V., Zhuravlev, K. S., Gutakovskii, A. K., Golyashov, V. A. & Tereshchenko, O. E., Jul 2023, In: Surfaces and Interfaces. 39, 102920.

    Research output: Contribution to journal › Article › peer-review

  8. Anodic layer formation on the InAlAs surface in Townsend gas-discharge plasma

    Aksenov, M. S., Gutakovskii, A. K., Prosvirin, I. P., Dmitriev, D. V., Nedomolkina, A. A. & Valisheva, N. A., 1 Nov 2019, In: Materials Science in Semiconductor Processing. 102, 5 p., 104611.

    Research output: Contribution to journal › Article › peer-review

  9. Anomalous negative magnetoresistance of two-dimensional electrons

    Kanter, J., Vitkalov, S. & Bykov, A. A., 24 May 2018, In: Physical Review B. 97, 20, 7 p., 205440.

    Research output: Contribution to journal › Article › peer-review

  10. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotcenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Latyshev, A. V., Iinuma, M. & Terai, Y., 21 Mar 2017, In: Journal of Applied Physics. 121, 11, 9 p., 113101.

    Research output: Contribution to journal › Article › peer-review

  11. Atomic Force Microscopy Local Oxidation of GeO Thin Films

    Astankova, K. N., Kozhukhov, A. S., Gorokhov, E. B., Azarov, I. A. & Latyshev, A. V., 1 Dec 2018, In: Semiconductors. 52, 16, p. 2081-2084 4 p.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 3 4 5 6 7 8 ...10 Next

ID: 3081475