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Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers

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DOI

https://doi.org/10.1063/5.0078405
Final published version

M. S. Aksenov
N. A. Valisheva
D. V. Gorshkov
G. Y. Sidorov
I. P. Prosvirin
A. K. Gutakovskii

Original language	English
Article number	085301
Journal	Journal of Applied Physics
Volume	131
Issue number	8
DOIs	https://doi.org/10.1063/5.0078405
Publication status	Published - 28 Feb 2022

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

ID: 35635926