1. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journalArticlepeer-review

  2. Electrochemically exfoliated thin Bi2Se3 films and van der Waals heterostructures Bi2Se3/graphene

    Antonova, I. V., Nebogatikova, N. A., Kokh, K. A., Kustov, D. A., Soots, R. A., Golyashov, V. A. & Tereshchenko, O. E., 7 Jan 2020, In: Nanotechnology. 31, 12, 7 p., 125602.

    Research output: Contribution to journalArticlepeer-review

  3. Effect of deposition conditions on the thermal stability of Ge layers on SiO2 and their dewetting behavior

    Dabard, C., Shklyaev, A. A., Armbrister, V. A. & Aseev, A. L., 1 Jan 2020, In: Thin Solid Films. 693, 7 p., 137681.

    Research output: Contribution to journalArticlepeer-review

  4. Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

    Kablukova, E., Sabelfeld, K., Protasov, D. Y. & Zhuravlev, K. S., 1 Dec 2020, In: Monte Carlo Methods and Applications. 26, 4, p. 263-271 9 p.

    Research output: Contribution to journalArticlepeer-review

  5. Double Complex Salts [Ln(C 6 H 5 NO 2 ) 3 (H 2 O) 2 ][Cr(NCS) 6 ] · 2H 2 O (Ln = Lu, Ce, Y): Synthesis and Crystal Structure

    Cherkasova, E. V., Pervukhina, N. V., Kuratieva, N. V. & Cherkasova, T. G., 1 Mar 2019, In: Russian Journal of Inorganic Chemistry. 64, 3, p. 329-334 6 p.

    Research output: Contribution to journalArticlepeer-review

  6. Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

    Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K. & Shklyaev, A. A., Dec 2020, In: Semiconductors. 54, 12, p. 1605-1610 6 p.

    Research output: Contribution to journalArticlepeer-review

  7. Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5

    Osinnykh, I. V., Malin, T. V., Milakhin, D. S., Plyusnin, V. F. & Zhuravlev, K. S., 1 Jun 2019, In: Japanese Journal of Applied Physics. 58, SC, 7 p., 27.

    Research output: Contribution to journalArticlepeer-review

  8. Donor-acceptor nature of orange photoluminescence in AlN

    Aleksandrov, I. A., Malin, T. V., Milakhin, D. S., Ber, B. Y., Kazantsev, D. Y. & Zhuravlev, K. S., Oct 2020, In: Semiconductor Science and Technology. 35, 12, 9 p., 125006.

    Research output: Contribution to journalArticlepeer-review

  9. Diffusion in GaN/AlN superlattices: DFT and EXAFS study

    Aleksandrov, I. A., Malin, T. V., Zhuravlev, K. S., Trubina, S. V., Erenburg, S. B., Pecz, B. & Lebiadok, Y. V., 15 Jun 2020, In: Applied Surface Science. 515, 7 p., 146001.

    Research output: Contribution to journalArticlepeer-review

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