Highly textured AlN films deposited by pulsed DC magnetron sputtering with optimized process parameters

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Highly textured AlN films deposited by pulsed DC magnetron sputtering with optimized process parameters. / Shayapov, V. R.; Bogoslovtseva, A. L.; Chepkasov, S. Yu и др.

в: Solid State Communications, Том 397, 115821, 01.03.2025.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{cd2a08d9aa044de4b33d3f815a0e5fbd,

title = "Highly textured AlN films deposited by pulsed DC magnetron sputtering with optimized process parameters",

abstract = "The work is oriented towards finding the optimal process parameters of growth of polycrystalline AlN films by pulsed DC magnetron sputtering. The nitrogen concentration varied from 10 to 40 %, total flow of Ar/N2 gas mixture varied from 60 to 120 sccm, substrate temperatures were 100, 200 and 300 °C. X-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy, scanning electron microscopy with energy dispersive X-ray spectroscopy selected area electron diffraction and ellipsometry methods were applied for AlN films characterization. The transition layer at the film-substrate interface was investigated and its polycrystalline structure without preferred crystallite texture was confirmed. Correlations of deposition parameters and films{\textquoteright} texture, mechanical stresses, roughness, elemental and phase composition were found. As a result, optimal deposition parameters were selected to obtain highly textured along c-axis AlN films with reasonable growth rate, low roughness and minimum level of macro- and microstresses.",

keywords = "AlN, Hexagonal structure, Magnetron sputtering, Thin films",

author = "Shayapov, {V. R.} and Bogoslovtseva, {A. L.} and Chepkasov, {S. Yu} and Kapishnikov, {A. V.} and Mironova, {M. I.} and Geydt, {P. V.}",

note = "Сведения о финансировании Финансирующий спонсор Номер финансирования Ministry of Education and Science of the Russian Federation FSUS-2024-0020",

year = "2025",

month = mar,

day = "1",

doi = "10.1016/j.ssc.2024.115821",

language = "English",

volume = "397",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Highly textured AlN films deposited by pulsed DC magnetron sputtering with optimized process parameters

AU - Shayapov, V. R.

AU - Bogoslovtseva, A. L.

AU - Chepkasov, S. Yu

AU - Kapishnikov, A. V.

AU - Mironova, M. I.

AU - Geydt, P. V.

N1 - Сведения о финансировании Финансирующий спонсор Номер финансирования Ministry of Education and Science of the Russian Federation FSUS-2024-0020

PY - 2025/3/1

Y1 - 2025/3/1

N2 - The work is oriented towards finding the optimal process parameters of growth of polycrystalline AlN films by pulsed DC magnetron sputtering. The nitrogen concentration varied from 10 to 40 %, total flow of Ar/N2 gas mixture varied from 60 to 120 sccm, substrate temperatures were 100, 200 and 300 °C. X-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy, scanning electron microscopy with energy dispersive X-ray spectroscopy selected area electron diffraction and ellipsometry methods were applied for AlN films characterization. The transition layer at the film-substrate interface was investigated and its polycrystalline structure without preferred crystallite texture was confirmed. Correlations of deposition parameters and films’ texture, mechanical stresses, roughness, elemental and phase composition were found. As a result, optimal deposition parameters were selected to obtain highly textured along c-axis AlN films with reasonable growth rate, low roughness and minimum level of macro- and microstresses.

AB - The work is oriented towards finding the optimal process parameters of growth of polycrystalline AlN films by pulsed DC magnetron sputtering. The nitrogen concentration varied from 10 to 40 %, total flow of Ar/N2 gas mixture varied from 60 to 120 sccm, substrate temperatures were 100, 200 and 300 °C. X-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy, scanning electron microscopy with energy dispersive X-ray spectroscopy selected area electron diffraction and ellipsometry methods were applied for AlN films characterization. The transition layer at the film-substrate interface was investigated and its polycrystalline structure without preferred crystallite texture was confirmed. Correlations of deposition parameters and films’ texture, mechanical stresses, roughness, elemental and phase composition were found. As a result, optimal deposition parameters were selected to obtain highly textured along c-axis AlN films with reasonable growth rate, low roughness and minimum level of macro- and microstresses.

KW - AlN

KW - Hexagonal structure

KW - Magnetron sputtering

KW - Thin films

UR - https://www.mendeley.com/catalogue/61ab5518-3920-30a0-83b1-ce7adffcef2c/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85213502519&origin=inward&txGid=c0e4f90425345becb5800044e002073d

U2 - 10.1016/j.ssc.2024.115821

DO - 10.1016/j.ssc.2024.115821

M3 - Article

VL - 397

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

M1 - 115821

ER -

ID: 62800960