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Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films. / Islamov, Damir R.; Gritsenko, Vladimir A.; Perevalov, Timofey V. et al.

In: Acta Materialia, Vol. 166, 01.03.2019, p. 47-55.

Research output: Contribution to journal › Article › peer-review

Harvard

Islamov, DR, Gritsenko, VA, Perevalov, TV, Pustovarov, VA, Orlov, OM, Chernikova, AG, Markeev, AM, Slesazeck, S, Schroeder, U, Mikolajick, T & Krasnikov, GY 2019, 'Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films', Acta Materialia, vol. 166, pp. 47-55. https://doi.org/10.1016/j.actamat.2018.12.008

APA

Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Pustovarov, V. A., Orlov, O. M., Chernikova, A. G., Markeev, A. M., Slesazeck, S., Schroeder, U., Mikolajick, T., & Krasnikov, G. Y. (2019). Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films. Acta Materialia, 166, 47-55. https://doi.org/10.1016/j.actamat.2018.12.008

Vancouver

Islamov DR, Gritsenko VA, Perevalov TV, Pustovarov VA, Orlov OM, Chernikova AG et al. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films. Acta Materialia. 2019 Mar 1;166:47-55. doi: 10.1016/j.actamat.2018.12.008

Author

Islamov, Damir R. ; Gritsenko, Vladimir A. ; Perevalov, Timofey V. et al. / Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films. In: Acta Materialia. 2019 ; Vol. 166. pp. 47-55.

BibTeX

@article{14638bd57bcf459ab8a4eb0b315dfe68,
title = "Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films",
abstract = "The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the field cycling process are commonly observed and explained by the defect movement, defect generation and field induced phase transitions. In this work, the optical and transport experiments are combined with ab-initio simulations and transport modeling to validate that the defects which act as charge traps in ferroelectric active layers are oxygen vacancies. A new oxygen vacancy generation leads to a fast growth of leakage currents and a consequent degradation of the ferroelectric response in Hf0.5Zr0.5O2 films. Two possible pathways of the Hf0.5Zr0.5O2 ferroelectric property degradation are discussed.",
keywords = "Defects, Ferroelectric HfZrO, Leakage currents, Luminescence, Oxygen vacancies, POLARIZATION REVERSAL, MECHANISM, Ferroelectric Hf0.5Zr0.5O2, CHARGE-TRANSPORT, HAFNIUM",
author = "Islamov, {Damir R.} and Gritsenko, {Vladimir A.} and Perevalov, {Timofey V.} and Pustovarov, {Vladimir A.} and Orlov, {Oleg M.} and Chernikova, {Anna G.} and Markeev, {Andrey M.} and Stefan Slesazeck and Uwe Schroeder and Thomas Mikolajick and Krasnikov, {Gennadiy Ya}",
note = "Publisher Copyright: {\textcopyright} 2018 Acta Materialia Inc.",
year = "2019",
month = mar,
day = "1",
doi = "10.1016/j.actamat.2018.12.008",
language = "English",
volume = "166",
pages = "47--55",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

AU - Islamov, Damir R.

AU - Gritsenko, Vladimir A.

AU - Perevalov, Timofey V.

AU - Pustovarov, Vladimir A.

AU - Orlov, Oleg M.

AU - Chernikova, Anna G.

AU - Markeev, Andrey M.

AU - Slesazeck, Stefan

AU - Schroeder, Uwe

AU - Mikolajick, Thomas

AU - Krasnikov, Gennadiy Ya

N1 - Publisher Copyright: © 2018 Acta Materialia Inc.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the field cycling process are commonly observed and explained by the defect movement, defect generation and field induced phase transitions. In this work, the optical and transport experiments are combined with ab-initio simulations and transport modeling to validate that the defects which act as charge traps in ferroelectric active layers are oxygen vacancies. A new oxygen vacancy generation leads to a fast growth of leakage currents and a consequent degradation of the ferroelectric response in Hf0.5Zr0.5O2 films. Two possible pathways of the Hf0.5Zr0.5O2 ferroelectric property degradation are discussed.

AB - The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the field cycling process are commonly observed and explained by the defect movement, defect generation and field induced phase transitions. In this work, the optical and transport experiments are combined with ab-initio simulations and transport modeling to validate that the defects which act as charge traps in ferroelectric active layers are oxygen vacancies. A new oxygen vacancy generation leads to a fast growth of leakage currents and a consequent degradation of the ferroelectric response in Hf0.5Zr0.5O2 films. Two possible pathways of the Hf0.5Zr0.5O2 ferroelectric property degradation are discussed.

KW - Defects

KW - Ferroelectric HfZrO

KW - Leakage currents

KW - Luminescence

KW - Oxygen vacancies

KW - POLARIZATION REVERSAL

KW - MECHANISM

KW - Ferroelectric Hf0.5Zr0.5O2

KW - CHARGE-TRANSPORT

KW - HAFNIUM

UR - http://www.scopus.com/inward/record.url?scp=85058713122&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2018.12.008

DO - 10.1016/j.actamat.2018.12.008

M3 - Article

AN - SCOPUS:85058713122

VL - 166

SP - 47

EP - 55

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

ER -

ID: 18069054