Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process › Research Explorer

DOI

https://doi.org/10.1016/j.matlet.2019.127086
Final published version

A. O. Zamchiy
E. A. Baranov
E. A. Maximovskiy
V. A. Volodin
V. I. Vdovin
A. K. Gutakovskii
I. V. Korolkov

Original language	English
Article number	127086
Number of pages	4
Journal	Materials Letters
Volume	261
DOIs	https://doi.org/10.1016/j.matlet.2019.127086
Publication status	Published - 15 Feb 2020

Research areas

Aluminum-induced crystallization, Inverted aluminum-induced layer exchange, Phase transformation, Polycrystalline silicon, Silicon suboxide, Thin films, GROWTH, INDUCED CRYSTALLIZATION

OECD FOS+WOS

ID: 23001976