Standard

Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process. / Zamchiy, A. O.; Baranov, E. A.; Maximovskiy, E. A. et al.

In: Materials Letters, Vol. 261, 127086, 15.02.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Zamchiy, AO, Baranov, EA, Maximovskiy, EA, Volodin, VA, Vdovin, VI, Gutakovskii, AK & Korolkov, IV 2020, 'Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process', Materials Letters, vol. 261, 127086. https://doi.org/10.1016/j.matlet.2019.127086

APA

Zamchiy, A. O., Baranov, E. A., Maximovskiy, E. A., Volodin, V. A., Vdovin, V. I., Gutakovskii, A. K., & Korolkov, I. V. (2020). Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process. Materials Letters, 261, [127086]. https://doi.org/10.1016/j.matlet.2019.127086

Vancouver

Zamchiy AO, Baranov EA, Maximovskiy EA, Volodin VA, Vdovin VI, Gutakovskii AK et al. Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process. Materials Letters. 2020 Feb 15;261:127086. doi: 10.1016/j.matlet.2019.127086

Author

Zamchiy, A. O. ; Baranov, E. A. ; Maximovskiy, E. A. et al. / Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process. In: Materials Letters. 2020 ; Vol. 261.

BibTeX

@article{8a6409d0b9b14711be53abbc990db3e9,
title = "Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process",
abstract = "A novel fabrication method of polycrystalline silicon (poly-Si) films by aluminum-induced crystallization of amorphous silicon suboxide (a-SiO0.2) material via the inverted aluminum-induced layer exchange (ALILE) mechanism on glass substrates is presented. The presence of oxygen in the system prevented the formation of columnar crystalline Si precipitates (hillocks) in the bottom layer of the structure even at a process temperature of 550 °C. At the same time, this layer, consisting of Al, Si, and O atoms, contained nanocrystalline Si inclusions and a layer of initial a-SiOx with a thickness of about 60 nm, which was called the “a-SiOx residual layer”. The poly-Si formed had a preferred (1 1 1) crystal orientation and an average crystallite size of 4.5 µm.",
keywords = "Aluminum-induced crystallization, Inverted aluminum-induced layer exchange, Phase transformation, Polycrystalline silicon, Silicon suboxide, Thin films, GROWTH, INDUCED CRYSTALLIZATION",
author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Maximovskiy, {E. A.} and Volodin, {V. A.} and Vdovin, {V. I.} and Gutakovskii, {A. K.} and Korolkov, {I. V.}",
note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",
year = "2020",
month = feb,
day = "15",
doi = "10.1016/j.matlet.2019.127086",
language = "English",
volume = "261",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Maximovskiy, E. A.

AU - Volodin, V. A.

AU - Vdovin, V. I.

AU - Gutakovskii, A. K.

AU - Korolkov, I. V.

N1 - Publisher Copyright: © 2019 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2020/2/15

Y1 - 2020/2/15

N2 - A novel fabrication method of polycrystalline silicon (poly-Si) films by aluminum-induced crystallization of amorphous silicon suboxide (a-SiO0.2) material via the inverted aluminum-induced layer exchange (ALILE) mechanism on glass substrates is presented. The presence of oxygen in the system prevented the formation of columnar crystalline Si precipitates (hillocks) in the bottom layer of the structure even at a process temperature of 550 °C. At the same time, this layer, consisting of Al, Si, and O atoms, contained nanocrystalline Si inclusions and a layer of initial a-SiOx with a thickness of about 60 nm, which was called the “a-SiOx residual layer”. The poly-Si formed had a preferred (1 1 1) crystal orientation and an average crystallite size of 4.5 µm.

AB - A novel fabrication method of polycrystalline silicon (poly-Si) films by aluminum-induced crystallization of amorphous silicon suboxide (a-SiO0.2) material via the inverted aluminum-induced layer exchange (ALILE) mechanism on glass substrates is presented. The presence of oxygen in the system prevented the formation of columnar crystalline Si precipitates (hillocks) in the bottom layer of the structure even at a process temperature of 550 °C. At the same time, this layer, consisting of Al, Si, and O atoms, contained nanocrystalline Si inclusions and a layer of initial a-SiOx with a thickness of about 60 nm, which was called the “a-SiOx residual layer”. The poly-Si formed had a preferred (1 1 1) crystal orientation and an average crystallite size of 4.5 µm.

KW - Aluminum-induced crystallization

KW - Inverted aluminum-induced layer exchange

KW - Phase transformation

KW - Polycrystalline silicon

KW - Silicon suboxide

KW - Thin films

KW - GROWTH

KW - INDUCED CRYSTALLIZATION

UR - http://www.scopus.com/inward/record.url?scp=85076695577&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2019.127086

DO - 10.1016/j.matlet.2019.127086

M3 - Article

AN - SCOPUS:85076695577

VL - 261

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 127086

ER -

ID: 23001976