1. AlInAs quantum dots

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V. & Aseev, A. L., 1 Jan 2017, In: JETP Letters. 105, 2, p. 103-109 7 p.

    Research output: Contribution to journalArticlepeer-review

  2. A highly porous surface of synthetic monocrystalline diamond: Effect of etching by Fe nanoparticles in hydrogen atmosphere

    Chepurov, A., Sonin, V., Shcheglov, D., Latyshev, A., Filatov, E. & Yelisseyev, A., 1 Nov 2018, In: International Journal of Refractory Metals and Hard Materials. 76, p. 12-15 4 p.

    Research output: Contribution to journalArticlepeer-review

  3. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

    Sitnikov, S. V., Latyshev, A. V. & Kosolobov, S. S., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 196-201 6 p.

    Research output: Contribution to journalArticlepeer-review

  4. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journalArticlepeer-review

  5. 2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures

    Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Feb 2020, In: Journal of Crystal Growth. 531, 6 p., 125347.

    Research output: Contribution to journalArticlepeer-review

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