2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures

Research output: Contribution to journal › Article › peer-review

A1. Nucleation, A1. Surface processes, A3. Molecular beam epitaxy, B2. Semiconducting germanium, B2. Semiconducting silicon, Nucleation, MAGIC ISLANDS, SILICON, TRANSITION, CLUSTERS, GROWTH, Molecular beam epitaxy, ATOMS, Semiconducting silicon, SCANNING-TUNNELING-MICROSCOPY, Surface processes, Semiconducting germanium, TRANSFORMATIONS, INITIAL-STAGES, STEPS

ID: 23057007