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  1. Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor

    Jaroshevich, A. S., Tkachenko, V. A., Kvon, Z. D., Kuzmin, N. S., Tkachenko, O. A., Baksheev, D. G., Marchishin, I. V., Bakarov, A. K., Rodyakina, E. E., Antonov, V. A., Popov, V. P. & Latyshev, A. V., Sept 2024, In: Bulletin of the Russian Academy of Sciences: Physics. 88, 9, p. 1505-1512 8 p.

    Research output: Contribution to journal › Article › peer-review

  2. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    Petrov, A. S., Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Apr 2019, In: Semiconductors. 53, 4, p. 434-438 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM

    Rogilo, D. I., Fedina, L. I., Ponomarev, S. A., Sheglov, D. V. & Latyshev, A. V., 1 Jan 2020, In: Journal of Crystal Growth. 529, 125273.

    Research output: Contribution to journal › Article › peer-review

  4. Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

    Ponomarev, S. A., Rogilo, D. I., Petrov, A. S., Sheglov, D. V. & Latyshev, A. V., Sept 2020, In: Optoelectronics, Instrumentation and Data Processing. 56, 5, p. 449-455 7 p.

    Research output: Contribution to journal › Article › peer-review

  5. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journal › Article › peer-review

  6. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journal › Article › peer-review

  7. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    Sitnikov, S. V., Rodyakina, E. E. & Latyshev, A. V., 1 Jun 2019, In: Semiconductors. 53, 6, p. 795-799 5 p.

    Research output: Contribution to journal › Article › peer-review

  8. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Effect of Mie resonances in coatings consisting of dielectric particles on the light propagation in substrate surface layers

    Shklyaev, A. A., Utkin, D. E., Tsarev, A. V. & Latyshev, A. V., Sept 2023, In: Optical Materials. 143, 114171.

    Research output: Contribution to journal › Article › peer-review

  10. Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

    Rodyakina, E. E., Sitnikov, S. V., Rogilo, D. I. & Latyshev, A. V., 1 Nov 2018, In: Russian Microelectronics. 47, 6, p. 365-370 6 p.

    Research output: Contribution to journal › Article › peer-review

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