Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM › Research Explorer

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Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.jcrysgro.2019.125273
Final published version

D. I. Rogilo
L. I. Fedina
S. A. Ponomarev
D. V. Sheglov
A. V. Latyshev

Original language	English
Article number	125273
Journal	Journal of Crystal Growth
Volume	529
DOIs	https://doi.org/10.1016/j.jcrysgro.2019.125273
Publication status	Published - 1 Jan 2020

Research areas

A1. Etching, A1. Surface processes, A1. Surface structure, B1. Chalcogenes, B2. Semiconducting silicon, GROWTH, Chalcogenes, Semiconducting silicon, Etching, Surface processes, Surface structure

OECD FOS+WOS

ID: 21936058