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  2. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

    Shklyaev, A. A. & Latyshev, A. V., 28 Jan 2019, In: Applied Surface Science. 465, p. 10-14 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    Sitnikov, S. V., Rodyakina, E. E. & Latyshev, A. V., 1 Jun 2019, In: Semiconductors. 53, 6, p. 795-799 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. Element base of quantum informatics II: Quantum communications with single photons

    Ryabtsev, I. I., Tretyakov, D. B., Kolyako, A. V., Pleshkov, A. S., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 121-130 10 p.

    Research output: Contribution to journal › Article › peer-review

  5. Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps

    Ryabtsev, I. I., Beterov, I. I., Yakshina, E. A., Tretyakov, D. B., Entin, V. M., Neizvestny, I. G., Latyshev, A. V. & Aseev, A. L., 1 Mar 2017, In: Russian Microelectronics. 46, 2, p. 109-120 12 p.

    Research output: Contribution to journal › Article › peer-review

  6. Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

    Ponomarev, S. A., Rogilo, D. I., Petrov, A. S., Sheglov, D. V. & Latyshev, A. V., Sept 2020, In: Optoelectronics, Instrumentation and Data Processing. 56, 5, p. 449-455 7 p.

    Research output: Contribution to journal › Article › peer-review

  7. Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM

    Rogilo, D. I., Fedina, L. I., Ponomarev, S. A., Sheglov, D. V. & Latyshev, A. V., 1 Jan 2020, In: Journal of Crystal Growth. 529, 125273.

    Research output: Contribution to journal › Article › peer-review

  8. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    Petrov, A. S., Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Apr 2019, In: Semiconductors. 53, 4, p. 434-438 5 p.

    Research output: Contribution to journal › Article › peer-review

  9. Formation of 2D-PhCs with missing holes based on Si-layers by EBL

    Utkin, D. E., Shklyev, A. A., Tsarev, A. V. & Latyshev, A. V., 23 Nov 2017, In: Journal of Physics: Conference Series. 917, 6, 3 p., 062030.

    Research output: Contribution to journal › Article › peer-review

  10. Giant gap-plasmon tip-enhanced Raman scattering of MoS2 monolayers on Au nanocluster arrays

    Milekhin, A. G., Rahaman, M., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 14 Feb 2018, In: Nanoscale. 10, 6, p. 2755-2763 9 p.

    Research output: Contribution to journal › Article › peer-review

  11. Giant microwave-induced B -periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

    Levin, A. D., Mikhailov, S. A., Gusev, G. M., Kvon, Z. D., Rodyakina, E. E. & Latyshev, A. V., 23 Feb 2017, In: Physical Review B. 95, 8, 4 p., 081408.

    Research output: Contribution to journal › Article › peer-review

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