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  1. Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

    Abramkin, D. S. & Shamirzaev, T. S., 1 May 2019, In: Semiconductors. 53, 5, p. 703-710 8 p.

    Research output: Contribution to journal › Article › peer-review

  2. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

    Abramkin, D. S., Petrushkov, M. O., Bogomolov, D. B., Emelyanov, E. A., Yesin, M. Y., Vasev, A. V., Bloshkin, A. A., Koptev, E. S., Putyato, M. A., Atuchin, V. V. & Preobrazhenskii, V. V., 28 Feb 2023, In: Nanomaterials. 13, 5, 910.

    Research output: Contribution to journal › Article › peer-review

  3. Spinodal Decomposition in InSb/AlAs Heterostructures

    Abramkin, D. S., Bakarov, A. K., Gutakovskii, A. K. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1392-1397 6 p.

    Research output: Contribution to journal › Article › peer-review

  4. Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

    Abramkin, D. S. & Atuchin, V. V., Nov 2022, In: Nanomaterials. 12, 21, 3794.

    Research output: Contribution to journal › Article › peer-review

  5. Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

    Gulyaev, D. V., Abramkin, D. S., Dmitriev, D. V., Toropov, A. I., Kolosovsky, E. A., Ponomarev, S. A., Kurus, N. N., Milekhin, I. A. & Zhuravlev, K. S., 18 Nov 2024, In: Nanomaterials. 14, 22, 1842.

    Research output: Contribution to journal › Article › peer-review

  6. Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si/In2O3:Er films

    Feklistov, K. V., Lemzyakov, A. G., Prosvirin, I. P., Gismatulin, A. A., Shklyaev, A. A., Zhivodkov, Y. A., Krivyakin, G., Komonov, A. I., Kozhukhov, A. S., Spesivsev, E. V., Gulyaev, D. V., Abramkin, D. S., Pugachev, A. M., Esaev, D. G. & Sidorov, G. Y., Dec 2020, In: Materials Research Express. 7, 12, 11 p., 125903.

    Research output: Contribution to journal › Article › peer-review

  7. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

    Nikiforov, V. E., Abramkin, D. S. & Shamirzaev, T. S., 1 Nov 2017, In: Semiconductors. 51, 11, p. 1513-1516 4 p.

    Research output: Contribution to journal › Article › peer-review

  8. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

    Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V. & Shamirzaev, T. S., 1 Mar 2018, In: Optoelectronics, Instrumentation and Data Processing. 54, 2, p. 181-186 6 p.

    Research output: Contribution to journal › Article › peer-review

  9. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R. & Shamirzaev, T. S., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1484-1490 7 p.

    Research output: Contribution to journal › Article › peer-review

  10. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Abramkin, D. S., Gutakovskii, A. K. & Shamirzaev, T. S., 21 Mar 2018, In: Journal of Applied Physics. 123, 11, 11 p., 115701.

    Research output: Contribution to journal › Article › peer-review

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