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  1. 2025

  2. Structural Transformation of Bi2Se3(001) Surface during Sn Monolayer Annealing

    Zakhozhev, K., Ponomarev, S., Golyashov, V., Nasimov, D., Kokh, K. & Rogilo, D., 8 Aug 2025, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 80-83 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  3. Контроль формирования слоев графена на подложках 6H-SiC(0001) методом in situ дифракции быстрых электронов на отражение

    Дураков, Д. Е., Петров, А. С., Рогило, Д. И., Макеева, А. А., Насимов, Д. А., Никифоров, Д. Ф., Курусь, Н. Н., Милёхин, А. Г., Щеглов, Д. В. & Латышев, А. В., 2025, In: Физика и техника полупроводников. 59, 2, p. 102-108

    Research output: Contribution to journal › Article › peer-review

  4. 2024

  5. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

    Makeeva, A. A., Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Dec 2024, In: Journal of Crystal Growth. 647, 127873.

    Research output: Contribution to journal › Article › peer-review

  6. Low-defect-density SnSe2 films nucleated via thin layer crystallization

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Gutakovsky, A. K., Kurus, N. N., Kokh, K. A., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 1 Apr 2024, In: Journal of Crystal Growth. 631, 5 p., 127615.

    Research output: Contribution to journal › Article › peer-review

  7. Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

    Petrov, A. S., Rogilo, D. I., Vergules, A. I., Mansurov, V. G., Sheglov, D. V. & Latyshev, A. V., Mar 2024, In: Surface Science. 741, 13 p., 122418.

    Research output: Contribution to journal › Article › peer-review

  8. High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy

    Ponomarev, S. A., Rogilo, D. I., Nasimov, D. A., Kokh, K. A., Sheglov, D. V. & Latyshev, A. V., 15 Feb 2024, In: Journal of Crystal Growth. 628, 127545.

    Research output: Contribution to journal › Article › peer-review

  9. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

    Ponomarev, S. A., Rogilo, D. I., Zakhozhev, K. E., Nasimov, D. A., Kurus, N. N., Gutakovskii, A. K., Kokh, K. A., Milekhin, A. G., Sheglov, D. V. & Latyshev, A. V., 2024, In: Modern Electronic Materials. 10, 4, p. 251-261 11 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2023

  11. Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

    Petrov, A. S., Rogilo, D. I., Zhachuk, R. A., Vergules, A. I., Sheglov, D. V. & Latyshev, A. V., 30 Jan 2023, In: Applied Surface Science. 609, 155367.

    Research output: Contribution to journal › Article › peer-review

  12. 2022

  13. Van der Waals Heteroepitaxial Growth of Layered SnSe2 on Surfaces Si(111) and Bi2Se3 (0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus’, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Optoelectronics, Instrumentation and Data Processing. 58, 6, p. 564-570 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. Ван-дер-Ваальсовый гетероэпитаксиальный рост слоистого SNSE2 на поверхностях SI(111) и BI2SE3(0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Автометрия. 58, 6, p. 21-27 7 p.

    Research output: Contribution to journal › Article › peer-review

  15. 2021

  16. In situ reflection electron microscopy for investigation of surface processes on Bi2Se3(0001)

    Ponomarev, S. A., Rogilo, D. I., Kurus, N. N., Basalaeva, L. S., Kokh, K. A., Milekhin, A. G., Sheglov, D. V. & Latyshev, A. V., 13 Sept 2021, In: Journal of Physics: Conference Series. 1984, 1, 012016.

    Research output: Contribution to journal › Conference article › peer-review

  17. Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface

    Ponomarev, S., Rogilo, D., Mironov, A., Sheglov, D. & Latyshev, A., 30 Jun 2021, 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, p. 50-53 4 p. 9507592. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2021-June).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  18. Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium

    Rogilo, D., Sitnikov, S., Ponomarev, S., Sheglov, D., Fedina, L. & Latyshev, A., 28 Feb 2021, In: Applied Surface Science. 540, 9 p., 148269.

    Research output: Contribution to journal › Article › peer-review

  19. 2020

  20. SiCxNyOz Coatings Enhance Endothelialization and Bactericidal activity and Reduce Blood Cell Activation

    Bhaskar, N., Sulyaeva, V., Gatapova, E., Kaichev, V., Rogilo, D., Khomyakov, M., Kosinova, M. & Basu, B., 12 Oct 2020, In: ACS Biomaterials Science and Engineering. 6, 10, p. 5571-5587 17 p.

    Research output: Contribution to journal › Article › peer-review

  21. Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

    Ponomarev, S. A., Rogilo, D. I., Petrov, A. S., Sheglov, D. V. & Latyshev, A. V., Sept 2020, In: Optoelectronics, Instrumentation and Data Processing. 56, 5, p. 449-455 7 p.

    Research output: Contribution to journal › Article › peer-review

  22. 2018

  23. On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7 × 7) surface

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2018, In: Surface Science. 667, p. 1-7 7 p.

    Research output: Contribution to journal › Article › peer-review

  24. 2017

  25. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journal › Article › peer-review

ID: 3486631