1. 2025
  2. Structural Transformation of Bi2Se3(001) Surface during Sn Monolayer Annealing

    Zakhozhev, K., Ponomarev, S., Golyashov, V., Nasimov, D., Kokh, K. & Rogilo, D., 8 Aug 2025, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 80-83 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  3. 2024
  4. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

    Makeeva, A. A., Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Dec 2024, In: Journal of Crystal Growth. 647, 127873.

    Research output: Contribution to journalArticlepeer-review

  5. Low-defect-density SnSe2 films nucleated via thin layer crystallization

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Gutakovsky, A. K., Kurus, N. N., Kokh, K. A., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 1 Apr 2024, In: Journal of Crystal Growth. 631, 5 p., 127615.

    Research output: Contribution to journalArticlepeer-review

  6. Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

    Petrov, A. S., Rogilo, D. I., Vergules, A. I., Mansurov, V. G., Sheglov, D. V. & Latyshev, A. V., Mar 2024, In: Surface Science. 741, 13 p., 122418.

    Research output: Contribution to journalArticlepeer-review

  7. High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy

    Ponomarev, S. A., Rogilo, D. I., Nasimov, D. A., Kokh, K. A., Sheglov, D. V. & Latyshev, A. V., 15 Feb 2024, In: Journal of Crystal Growth. 628, 127545.

    Research output: Contribution to journalArticlepeer-review

  8. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

    Ponomarev, S. A., Rogilo, D. I., Zakhozhev, K. E., Nasimov, D. A., Kurus, N. N., Gutakovskii, A. K., Kokh, K. A., Milekhin, A. G., Sheglov, D. V. & Latyshev, A. V., 2024, In: Modern Electronic Materials. 10, 4, p. 251-261 11 p.

    Research output: Contribution to journalArticlepeer-review

  9. 2023
  10. Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

    Petrov, A. S., Rogilo, D. I., Zhachuk, R. A., Vergules, A. I., Sheglov, D. V. & Latyshev, A. V., 30 Jan 2023, In: Applied Surface Science. 609, 155367.

    Research output: Contribution to journalArticlepeer-review

  11. 2022
  12. Van der Waals Heteroepitaxial Growth of Layered SnSe2 on Surfaces Si(111) and Bi2Se3 (0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus’, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Optoelectronics, Instrumentation and Data Processing. 58, 6, p. 564-570 7 p.

    Research output: Contribution to journalArticlepeer-review

  13. 2021
  14. In situ reflection electron microscopy for investigation of surface processes on Bi2Se3(0001)

    Ponomarev, S. A., Rogilo, D. I., Kurus, N. N., Basalaeva, L. S., Kokh, K. A., Milekhin, A. G., Sheglov, D. V. & Latyshev, A. V., 13 Sept 2021, In: Journal of Physics: Conference Series. 1984, 1, 012016.

    Research output: Contribution to journalConference articlepeer-review

  15. Thermal Hysteresis in the Resistance of In2Se3Film on Si(111) Surface

    Ponomarev, S., Rogilo, D., Mironov, A., Sheglov, D. & Latyshev, A., 30 Jun 2021, 2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings. IEEE Computer Society, p. 50-53 4 p. 9507592. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; vol. 2021-June).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  16. Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium

    Rogilo, D., Sitnikov, S., Ponomarev, S., Sheglov, D., Fedina, L. & Latyshev, A., 28 Feb 2021, In: Applied Surface Science. 540, 9 p., 148269.

    Research output: Contribution to journalArticlepeer-review

  17. 2020
  18. SiCxNyOCoatings Enhance Endothelialization and Bactericidal activity and Reduce Blood Cell Activation

    Bhaskar, N., Sulyaeva, V., Gatapova, E., Kaichev, V., Rogilo, D., Khomyakov, M., Kosinova, M. & Basu, B., 12 Oct 2020, In: ACS Biomaterials Science and Engineering. 6, 10, p. 5571-5587 17 p.

    Research output: Contribution to journalArticlepeer-review

  19. Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

    Ponomarev, S. A., Rogilo, D. I., Petrov, A. S., Sheglov, D. V. & Latyshev, A. V., Sept 2020, In: Optoelectronics, Instrumentation and Data Processing. 56, 5, p. 449-455 7 p.

    Research output: Contribution to journalArticlepeer-review

  20. 2018
  21. On the role of mobile nanoclusters in 2D island nucleation on Si(111)-(7 × 7) surface

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S. & Latyshev, A. V., 1 Jan 2018, In: Surface Science. 667, p. 1-7 7 p.

    Research output: Contribution to journalArticlepeer-review

  22. 2017
  23. 2D Si island nucleation on the Si(111) surface at initial and late growth stages: On the role of step permeability in pyramidlike growth

    Rogilo, D. I., Fedina, L. I., Kosolobov, S. S., Ranguelov, B. S. & Latyshev, A. V., 1 Jan 2017, In: Journal of Crystal Growth. 457, p. 188-195 8 p.

    Research output: Contribution to journalArticlepeer-review

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