Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium

Research output: Contribution to journal › Article › peer-review

A1. Etching, A1. Morphological stability, A1. Surface processes, A3. Molecular beam epitaxy, B2. Semiconducting silicon, OXIDATION, Morphological stability, Etching, MOUND FORMATION, EPITAXY, PHASE, SI, ISLAND NUCLEATION, Molecular beam epitaxy, Semiconducting silicon, SCANNING-TUNNELING-MICROSCOPY, DIFFUSION, Surface processes, STEP PERMEABILITY, ELECTRON-MICROSCOPE

ID: 26029012