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  1. 2025

  2. Structural Transformation of Bi2Se3(001) Surface during Sn Monolayer Annealing

    Zakhozhev, K., Ponomarev, S., Golyashov, V., Nasimov, D., Kokh, K. & Rogilo, D., 8 Aug 2025, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, p. 80-83 4 p. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  3. Контроль формирования слоев графена на подложках 6H-SiC(0001) методом in situ дифракции быстрых электронов на отражение

    Дураков, Д. Е., Петров, А. С., Рогило, Д. И., Макеева, А. А., Насимов, Д. А., Никифоров, Д. Ф., Курусь, Н. Н., Милёхин, А. Г., Щеглов, Д. В. & Латышев, А. В., 2025, In: Физика и техника полупроводников. 59, 2, p. 102-108

    Research output: Contribution to journal › Article › peer-review

  4. 2024

  5. Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

    Makeeva, A. A., Petrov, A. S., Rogilo, D. I., Sheglov, D. V. & Latyshev, A. V., 1 Dec 2024, In: Journal of Crystal Growth. 647, 127873.

    Research output: Contribution to journal › Article › peer-review

  6. Low-defect-density SnSe2 films nucleated via thin layer crystallization

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Gutakovsky, A. K., Kurus, N. N., Kokh, K. A., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 1 Apr 2024, In: Journal of Crystal Growth. 631, 5 p., 127615.

    Research output: Contribution to journal › Article › peer-review

  7. Sn-mediated transformations on Si(111) surface: reconstructions, electromigration, homoepitaxy

    Petrov, A. S., Rogilo, D. I., Vergules, A. I., Mansurov, V. G., Sheglov, D. V. & Latyshev, A. V., Mar 2024, In: Surface Science. 741, 13 p., 122418.

    Research output: Contribution to journal › Article › peer-review

  8. High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy

    Ponomarev, S. A., Rogilo, D. I., Nasimov, D. A., Kokh, K. A., Sheglov, D. V. & Latyshev, A. V., 15 Feb 2024, In: Journal of Crystal Growth. 628, 127545.

    Research output: Contribution to journal › Article › peer-review

  9. In situ reflection electron microscopy for the surface processes analysis during sublimation and epitaxial growth of layered metal chalcogenides

    Ponomarev, S. A., Rogilo, D. I., Zakhozhev, K. E., Nasimov, D. A., Kurus, N. N., Gutakovskii, A. K., Kokh, K. A., Milekhin, A. G., Sheglov, D. V. & Latyshev, A. V., 2024, In: Modern Electronic Materials. 10, 4, p. 251-261 11 p.

    Research output: Contribution to journal › Article › peer-review

  10. 2023

  11. Structural transitions on Si(1 1 1) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

    Petrov, A. S., Rogilo, D. I., Zhachuk, R. A., Vergules, A. I., Sheglov, D. V. & Latyshev, A. V., 30 Jan 2023, In: Applied Surface Science. 609, 155367.

    Research output: Contribution to journal › Article › peer-review

  12. 2022

  13. Van der Waals Heteroepitaxial Growth of Layered SnSe2 on Surfaces Si(111) and Bi2Se3 (0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus’, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Optoelectronics, Instrumentation and Data Processing. 58, 6, p. 564-570 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. Ван-дер-Ваальсовый гетероэпитаксиальный рост слоистого SNSE2 на поверхностях SI(111) и BI2SE3(0001)

    Ponomarev, S. A., Zakhozhev, K. E., Rogilo, D. I., Kurus, N. N., Sheglov, D. V., Milekhin, A. G. & Latyshev, A. V., 2022, In: Автометрия. 58, 6, p. 21-27 7 p.

    Research output: Contribution to journal › Article › peer-review

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