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  1. A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

    Emelyanov, E. A., Nastovjak, A. G., Petrushkov, M. O., Esin, M. Y., Gavrilova, T. A., Putyato, M. A., Schwartz, N. L., Shvets, V. A., Vasev, A. V., Semyagin, B. R. & Preobrazhenskii, V. V., 1 Feb 2020, In: Technical Physics Letters. 46, 2, p. 161-164 4 p.

    Research output: Contribution to journal › Article › peer-review

  2. An Ellipsometric Technique with an ATR Module and a Monochromatic Source of Radiation for Measurement of Optical Constants of Liquids in the Terahertz Range

    Azarov, I. A., Choporova, Y. Y., Shvets, V. A. & Knyazev, B. A., 1 Feb 2019, In: Journal of Infrared, Millimeter, and Terahertz Waves. 40, 2, p. 200-209 10 p.

    Research output: Contribution to journal › Article › peer-review

  3. Determining the Compositional Profile of HgTe/Cd xHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry

    Shvets, V. A., Mikhailov, N. N., Ikusov, D. G., Uzhakov, I. N. & Dvoretskii, S. A., 1 Aug 2019, In: Optics and Spectroscopy. 127, 2, p. 340-346 7 p.

    Research output: Contribution to journal › Article › peer-review

  4. Dispersion of the refractive index in high-k dielectrics

    Shvets, V. A., Kruchinin, V. N. & Gritsenko, V. A., 1 Nov 2017, In: Optics and Spectroscopy (English translation of Optika i Spektroskopiya). 123, 5, p. 728-732 5 p.

    Research output: Contribution to journal › Article › peer-review

  5. Dynamics of Growth of the Native Oxide of Cd xHg1−xTe

    Sidorov, G. Y., Shvets, V. A., Sidorov, Y. G. & Varavin, V. S., 1 Nov 2017, In: Optoelectronics, Instrumentation and Data Processing. 53, 6, p. 617-624 8 p.

    Research output: Contribution to journal › Article › peer-review

  6. Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers

    Shvets, V. A., Marin, D. V., Azarov, I. A., Yakushev, M. V. & Rykhlitskii, S. V., Sept 2021, In: Optoelectronics, Instrumentation and Data Processing. 57, 5, p. 476-484 9 p., 5.

    Research output: Contribution to journal › Article › peer-review

  7. Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

    Shvets, V. A., Azarov, I. A., Marin, D. V., Yakushev, M. V. & Rykhlitsky, S. V., 1 Jan 2019, In: Semiconductors. 53, 1, p. 132-137 6 p.

    Research output: Contribution to journal › Article › peer-review

  8. Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers

    Shvets, V. A., Azarov, I. A., Rykhlitskii, S. V. & Toropov, A. I., 1 Jan 2019, In: Optoelectronics, Instrumentation and Data Processing. 55, 1, p. 8-15 8 p.

    Research output: Contribution to journal › Article › peer-review

  9. Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride

    Marin, D. V., Shvets, V. A., Azarov, I. A., Yakushev, M. V. & Rykhlitskii, S. V., Aug 2021, In: Infrared Physics and Technology. 116, 103793.

    Research output: Contribution to journal › Article › peer-review

  10. Energy Position of the Size Quantization Levels in Multiple HgCdTe Quantum Wells

    Mikhailov, N. N., Remesnik, V. G., Aleshkin, V. Y., Dvoretsky, S. A., Uzhakov, I. N. & Shvets, V. A., Jun 2023, In: Bulletin of the Russian Academy of Sciences: Physics. 87, 6, p. 755-759 5 p.

    Research output: Contribution to journal › Article › peer-review

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