Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe › Research Explorer

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Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782619010196
Final published version

V. A. Shvets
I. A. Azarov
D. V. Marin
M. V. Yakushev
S. V. Rykhlitsky

Original language	English
Pages (from-to)	132-137
Number of pages	6
Journal	Semiconductors
Volume	53
Issue number	1
DOIs	https://doi.org/10.1134/S1063782619010196
Publication status	Published - 1 Jan 2019

OECD FOS+WOS

Research areas

SURFACE, GROWTH, OXIDE

ID: 20181867