Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	8-15
Number of pages	8
Journal	Optoelectronics, Instrumentation and Data Processing
Volume	55
Issue number	1
DOIs	https://doi.org/10.3103/S8756699019010023
Publication status	Published - 1 Jan 2019

critical points, ellipsometry, in situ thermometry, indium antimonide, surface temperature, SURFACE, GASB, MODEL DIELECTRIC-CONSTANTS

ID: 19356586