A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates › Research Explorer

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A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063785020020194
Final published version

E. A. Emelyanov
A. G. Nastovjak
M. O. Petrushkov
M. Yu Esin
T. A. Gavrilova
M. A. Putyato
N. L. Schwartz
V. A. Shvets
A. V. Vasev
B. R. Semyagin
V. V. Preobrazhenskii

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Technical Physics Letters
Volume	46
Issue number	2
DOIs	https://doi.org/10.1134/S1063785020020194
Publication status	Published - 1 Feb 2020

Research areas

atomic force microscopy, ellipsometry, molecular beam epitaxy, nanowires, scanning electronic microscopy, GAAS NANOWIRES

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

ID: 24161963