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  1. Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2

    Perevalov, T. V., Gritsenko, V. A., Islamov, D. R. & Prosvirin, I. P., 1 Jan 2018, In: JETP Letters. 107, 1, p. 55-60 6 p.

    Research output: Contribution to journal › Article › peer-review

  2. Electron and hole bipolar injection in magnesium oxide films

    Perevalov, T. V., Islamov, D. R., Zalyalov, T. M., Gismatulin, A. A., Golyashov, V. A., Tereshchenko, O. E., Gorshkov, D. V. & Gritsenko, V. A., 6 Feb 2024, In: Applied Physics Letters. 124, 4, 042903.

    Research output: Contribution to journal › Article › peer-review

  3. Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

    Islamov, D. R. & Perevalov, T. V., 15 Aug 2019, In: Microelectronic Engineering. 216, 4 p., 111041.

    Research output: Contribution to journal › Article › peer-review

  4. Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 265-270 6 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  5. Determination of trap density in hafnia films produced by two atomic layer deposition techniques

    Islamov, D. R., Gritsenko, V. A. & Lebedev, M. S., 25 Jun 2017, In: Microelectronic Engineering. 178, p. 104-107 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. CPU vs RAM in the Issue of ab initio Simulations of Doped Hafnium Oxide for RRAM and FRAM

    Perevalov, T. V. & Islamov, D. R., 2023, In: Supercomputing Frontiers and Innovations. 10, 3, p. 18-26 9 p.

    Research output: Contribution to journal › Article › peer-review

  7. Conduction mechanisms of TaN/HfO x /Ni memristors

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K. & Islamov, D. R., 5 Apr 2019, In: Materials Research Express. 6, 7, 7 p., 076411.

    Research output: Contribution to journal › Article › peer-review

  8. Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers

    Pil’nik, A. A., Chernov, A. A. & Islamov, D. R., 1 Dec 2020, In: Scientific Reports. 10, 1, 10 p., 15759.

    Research output: Contribution to journal › Article › peer-review

  9. Charge transport in thin hafnium and zirconium oxide films

    Islamov, D. R., Gritsenko, V. A. & Chin, A., 1 Mar 2017, In: Optoelectronics, Instrumentation and Data Processing. 53, 2, p. 184-189 6 p.

    Research output: Contribution to journal › Article › peer-review

  10. Atomic and electronic structures of the native defects responsible for the resistive effect in HfO2: ab initio simulations

    Perevalov, T. V. & Islamov, D. R., 15 Aug 2019, In: Microelectronic Engineering. 216, 5 p., 111038.

    Research output: Contribution to journal › Article › peer-review

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