Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization

Original language	English
Article number	111041
Number of pages	4
Journal	Microelectronic Engineering
Volume	216
DOIs	https://doi.org/10.1016/j.mee.2019.111041
Publication status	Published - 15 Aug 2019

Crystallographic defects, DFT calculations, Ferroelectric materials, Hafnium oxide, Oxygen vacancy, HFO2, PRESSURE, ZRO2, HAFNIA

ID: 20589498

Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation