Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2 › Research Explorer

DOI

https://doi.org/10.1088/1361-6528/aaacb1
Final published version

T. V. Perevalov
D. R. Islamov
V. A. Gritsenko
I. P. Prosvirin

Original language	English
Article number	194001
Number of pages	8
Journal	Nanotechnology
Volume	29
Issue number	19
DOIs	https://doi.org/10.1088/1361-6528/aaacb1
Publication status	Published - 11 May 2018

OECD FOS+WOS

Research areas

ab initio calculations, charge localization, electronic structure, ferroelectrics, oxygen vacancy, XPS, THIN-FILMS, HFO2, ZRO2, INTERFACE, MECHANISM

ID: 12154741