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  1. Electron and hole bipolar injection in magnesium oxide films

    Perevalov, T. V., Islamov, D. R., Zalyalov, T. M., Gismatulin, A. A., Golyashov, V. A., Tereshchenko, O. E., Gorshkov, D. V. & Gritsenko, V. A., 6 Feb 2024, In: Applied Physics Letters. 124, 4, 042903.

    Research output: Contribution to journal › Article › peer-review

  2. Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2

    Perevalov, T. V., Gritsenko, V. A., Islamov, D. R. & Prosvirin, I. P., 1 Jan 2018, In: JETP Letters. 107, 1, p. 55-60 6 p.

    Research output: Contribution to journal › Article › peer-review

  3. Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2

    Perevalov, T. V., Islamov, D. R., Gritsenko, V. A. & Prosvirin, I. P., 11 May 2018, In: Nanotechnology. 29, 19, 8 p., 194001.

    Research output: Contribution to journal › Article › peer-review

  4. Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

    Pil’nik, A. A., Chernov, A. A. & Islamov, D. R., 13 May 2021, In: Scientific Reports. 11, 1, p. 10163 10163.

    Research output: Contribution to journal › Article › peer-review

  5. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Pustovarov, V. A., Orlov, O. M., Chernikova, A. G., Markeev, A. M., Slesazeck, S., Schroeder, U., Mikolajick, T. & Krasnikov, G. Y., 1 Mar 2019, In: Acta Materialia. 166, p. 47-55 9 p.

    Research output: Contribution to journal › Article › peer-review

  6. Impact of lanthanum doping on the electronic structure of oxygen vacancies in hafnium oxide

    Perevalov, T. V. & Islamov, D. R., 30 Jan 2024, In: Computational Materials Science. 233, 5 p., 112708.

    Research output: Contribution to journal › Article › peer-review

  7. Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide

    Islamov, D. R., Zalyalov, T. M., Orlov, O. M., Gritsenko, V. A. & Krasnikov, G. Y., 19 Oct 2020, In: Applied Physics Letters. 117, 16, 5 p., 162901.

    Research output: Contribution to journal › Article › peer-review

  8. Influence of the active TaN/ZrOx/Ni memristor layer oxygen content on forming and resistive switching behavior

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K., Perevalov, T. V., Prosvirin, I. P. & Islamov, D. R., 30 Apr 2021, In: Nanotechnology. 32, 18, 185205.

    Research output: Contribution to journal › Article › peer-review

  9. Leakage currents mechanism in thin films of ferroelectric Hf0.5Zr0.5O2

    Islamov, D. R., Chernikova, A. G., Kozodaev, M. G., Markeev, A. M., Perevalov, T. V., Gritsenko, V. A. & Orlov, O. M., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 4 p., 012002.

    Research output: Contribution to journal › Conference article › peer-review

  10. Mechanism of charge transport of stress induced leakage current and trap nature in thermal oxide on silicon

    Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Orlov, O. M. & Krasnikov, G. Y., 15 Aug 2017, In: Journal of Physics: Conference Series. 864, 1, 4 p., 012003.

    Research output: Contribution to journal › Conference article › peer-review

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