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  1. Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevskii, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2018, In: Quantum Electronics. 48, 3, p. 215-221 7 p.

    Research output: Contribution to journal › Article › peer-review

  2. Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jul 2018, In: Atmospheric and Oceanic Optics. 31, 4, p. 405-409 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., Sept 2021, In: Technical Physics Letters. 47, 9, p. 692-695 4 p.

    Research output: Contribution to journal › Article › peer-review

  4. Light emission of heavily doped AlGaN structures under optical pumping

    Bokhan, P. A., Fateev, N. V., Osinnykh, I. V., Malin, T. V., Zakrevsky, D. E., Zhuravlev, K. S., Wei, X., Li, J. & Chen, L., 1 Apr 2018, In: Journal of Semiconductors. 39, 4, 6 p., 043002.

    Research output: Contribution to journal › Article › peer-review

  5. Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., 1 Nov 2018, In: Journal of Luminescence. 203, p. 127-134 8 p.

    Research output: Contribution to journal › Article › peer-review

  6. Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V. & Fateev, N. V., May 2024, In: Semiconductors. 58, 5, p. 386-392 7 p.

    Research output: Contribution to journal › Article › peer-review

  7. Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Jul 2020, In: Optical Materials. 105, 5 p., 109879.

    Research output: Contribution to journal › Article › peer-review

  8. Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Sept 2019, In: Technical Physics Letters. 45, 9, p. 951-954 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. Radiation enhancement in doped AlGaN-structures upon optical pumping

    Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V. & Fateev, N. V., 1 Jan 2017, In: Technical Physics Letters. 43, 1, p. 46-49 4 p.

    Research output: Contribution to journal › Article › peer-review

  10. Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

    Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E. & Zhuravlev, K. S., Dec 2022, In: Journal of Luminescence. 252, 119392.

    Research output: Contribution to journal › Article › peer-review

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