Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56

Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

Research output: Contribution to journal › Article › peer-review

AlN/GaN heterostructure, donor-acceptor recombination, electron-acceptor recombination, heavily doped AlxGa1 –xN structures, optical gain, p-channel transistor, polarization, two-dimensional hole gas

ID: 61123219