The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface › Research Explorer

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The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In_0.53Ga_0.47As Interface

Research output: Contribution to journal › Article › peer-review

Natural Sciences Section

DOI

https://doi.org/10.1134/S1063785021050175
Final published version

M. S. Aksenov
N. A. Valisheva
A. P. Kovchavtsev

Original language	English
Pages (from-to)	478-481
Number of pages	4
Journal	Technical Physics Letters
Volume	47
Issue number	6
DOIs	https://doi.org/10.1134/S1063785021050175
Publication status	Published - Jun 2021

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

Research areas

anodic oxide, C–V characteristics, density of interface states, fluorine, InGaAs, In0.53Ga0.47As

State classification of scientific and technological information

29 PHYSICS

ID: 35260499