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  1. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

    Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I. & Zhuravlev, K. S., 1 Feb 2019, In: Technical Physics Letters. 45, 2, p. 180-184 5 p.

    Research output: Contribution to journal › Article › peer-review

  2. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

    Aksenov, M. S., Valisheva, N. A. & Kovchavtsev, A. P., Jun 2021, In: Technical Physics Letters. 47, 6, p. 478-481 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

    Kovchavtsev, A. P., Aksenov, M. S., Nastov’yak, A. E., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y. & Dmitriev, D. V., 1 May 2020, In: Technical Physics Letters. 46, 5, p. 469-472 4 p.

    Research output: Contribution to journal › Article › peer-review

  4. Optical properties of native (anodic) layer on the InAlAs surface of different morphology

    Valisheva, N. A., Kruchinin, V. N., Aksenov, M. S., Azarov, I. A. & Nedomolkina, A. A., 30 Jun 2021, In: Thin Solid Films. 728, 138692.

    Research output: Contribution to journal › Article › peer-review

  5. Nonlinear Hall Coefficient in Films of a Three-Dimensional Topological Insulator

    Stepina, N. P., Bazhenov, A. O., Shumilin, A. V., Zhdanov, E. Y., Ishchenko, D. V., Kirienko, V. V., Aksenov, M. S. & Tereshchenko, O. E., Aug 2024, In: JETP Letters. 120, 3, p. 199-204 6 p.

    Research output: Contribution to journal › Article › peer-review

  6. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E. & Valisheva, N. A., 7 May 2018, In: Journal of Applied Physics. 123, 17, 6 p., 173901.

    Research output: Contribution to journal › Article › peer-review

  7. Influence of formation conditions and annealing on the parameters of Pt/InAlAs Schottky barriers

    Genze, I. Y., Aksenov, M. S., Paramonova, M. A., Dmitriev, D. V. & Zhuravlev, K. S., 1 Feb 2024, In: Journal of Optical Technology (A Translation of Opticheskii Zhurnal). 91, 2, p. 83-85 3 p.

    Research output: Contribution to journal › Article › peer-review

  8. High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

    Zhuravlev, K. S., Valisheva, N. A., Aksenov, M. S., Dmitriev, D. D., Toropov, A. I., Chistokhin, I. B., Gilinsky, A. M., Protasov, D. Y., Malyshev, S. A., Chizh, A. L. & Mikitchuk, K. B., 1 May 2019, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2 p. 8803902. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  9. High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

    Zhuravlev, K. S., Gilinskii, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L. & Mikitchuk, K. B., Sept 2021, In: Technical Physics. 66, 9, p. 1072-1077 6 p., 34.

    Research output: Contribution to journal › Article › peer-review

  10. High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

    Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M. & Chistokhin, I. B., 1 Jul 2019, In: Technical Physics Letters. 45, 7, p. 739-741 3 p.

    Research output: Contribution to journal › Article › peer-review

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