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  1. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

    Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Y., Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K. & Preobrazhenskiy, V. V., Feb 2021, In: Semiconductors. 55, 2, p. 194-201 8 p.

    Research output: Contribution to journal › Article › peer-review

  2. Formation of Periodic Structures (2D-PhCs) by Scanning Electron Lithography

    Utkin, D., Shklyev, A., Tsarev, A., Latyshev, A. & Nasimov, D., 1 Jan 2017, In: Physics Procedia. 86, p. 127-130 4 p.

    Research output: Contribution to journal › Conference article › peer-review

  3. Formation of well-ordered surfaces of Bi2-xSbxTe3-ySey topological insulators using wet chemical treatment

    Tarasov, A. S., Kumar, N., Golyashov, V. A., Akhundov, I. O., Ishchenko, D. V., Kokh, K. A., Bazhenov, A. O., Stepina, N. P. & Tereshchenko, O. E., 15 Mar 2024, In: Applied Surface Science. 649, 9 p., 159122.

    Research output: Contribution to journal › Article › peer-review

  4. Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

    Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F. & Baranovskii, S. D., 21 Jul 2017, In: Physical Review B. 96, 3, 7 p., 035204.

    Research output: Contribution to journal › Article › peer-review

  5. Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells

    Dobretsova, A. A., Kvon, Z. D., Braginskii, L. S., Entin, M. V. & Mikhailov, N. N., 1 Nov 2018, In: Semiconductors. 52, 11, p. 1468-1472 5 p.

    Research output: Contribution to journal › Article › peer-review

  6. Gated two-dimensional electron gas in magnetic field: Nonlinear versus linear regime

    Dyakonova, N., Dyakonov, M. & Kvon, Z. D., 24 Nov 2020, In: Physical Review B. 102, 20, 6 p., 205305.

    Research output: Contribution to journal › Article › peer-review

  7. Generating Function Method for Calculating the Potentials of Inhomogeneous Polyhedra

    Nenashev, A. V., 20 Jan 2022, In: Frontiers in Physics. 9, 795693.

    Research output: Contribution to journal › Article › peer-review

  8. Geometric and electronic structure of the cs-doped Bi2Se3(0001) surface

    Otrokov, M. M., Ernst, A., Mohseni, K., Fulara, H., Roy, S., Castro, G. R., Rubio-Zuazo, J., Ryabishchenkova, A. G., Kokh, K. A., Tereshchenko, O. E., Aliev, Z. S., Babanly, M. B., Chulkov, E. V., Meyerheim, H. L. & Parkin, S. S. P., 22 May 2017, In: Physical Review B. 95, 20, 9 p., 205429.

    Research output: Contribution to journal › Article › peer-review

  9. Geometric engineering of viscous magnetotransport in a two-dimensional electron system

    Levin, A. D., Gusev, G. M., Yaroshevich, A. S., Kvon, Z. D. & Bakarov, A. K., 15 Sept 2023, In: Physical Review B. 108, 11, 9 p., 115310.

    Research output: Contribution to journal › Article › peer-review

  10. Giant gap-plasmon tip-enhanced Raman scattering of MoS2 monolayers on Au nanocluster arrays

    Milekhin, A. G., Rahaman, M., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 14 Feb 2018, In: Nanoscale. 10, 6, p. 2755-2763 9 p.

    Research output: Contribution to journal › Article › peer-review

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