1. 2019
  2. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    Petrov, A. S., Sitnikov, S. V., Kosolobov, S. S. & Latyshev, A. V., 1 Apr 2019, In: Semiconductors. 53, 4, p. 434-438 5 p.

    Research output: Contribution to journalArticlepeer-review

  3. Conduction mechanisms of TaN/HfO x /Ni memristors

    Voronkovskii, V. A., Aliev, V. S., Gerasimova, A. K. & Islamov, D. R., 5 Apr 2019, In: Materials Research Express. 6, 7, 7 p., 076411.

    Research output: Contribution to journalArticlepeer-review

  4. Monte Carlo simulation of roughening at step-terraced surfaces

    Kazantsev, D. M., Shwartz, N. L. & Alperovich, V. L., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012010.

    Research output: Contribution to journalConference articlepeer-review

  5. Surface photovoltage in a p-GaN(Cs) photocathode

    Rozhkov, S. A., Bakin, V. V., Gorshkov, D. V., Kosolobov, S. N. & Scheibler, H. E., 17 Apr 2019, In: Journal of Physics: Conference Series. 1199, 1, 012031.

    Research output: Contribution to journalConference articlepeer-review

  6. Erratum to: Bound State of an Electron in a MOS Structure Due to the Spin–Orbit Interaction (Journal of Experimental and Theoretical Physics, (2018), 127, 6, (1130-1135), 10.1134/S1063776118120075)

    Mahmoodian, M. M. & Chaplik, A. V., 1 May 2019, In: Journal of Experimental and Theoretical Physics. 128, 5, p. 816-816 1 p.

    Research output: Contribution to journalComment/debatepeer-review

  7. The role of a plasmonic substrate on the enhancement and spatial resolution of tip-enhanced Raman scattering

    Rahaman, M., Milekhin, A. G., Mukherjee, A., Rodyakina, E. E., Latyshev, A. V., Dzhagan, V. M. & Zahn, D. R. T., 1 May 2019, In: Faraday Discussions. 214, p. 309-323 15 p.

    Research output: Contribution to journalArticlepeer-review

  8. Topological surface states in thick partially relaxed HgTe films

    Savchenko, M. L., Kozlov, D. A., Vasilev, N. N., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Kolesnikov, A. V., 14 May 2019, In: Physical Review B. 99, 19, 7 p., 195423.

    Research output: Contribution to journalArticlepeer-review

  9. Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

    Candussio, S., Budkin, G. V., Otteneder, M., Kozlov, D. A., Dmitriev, I. A., Bel'Kov, V. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A. & Ganichev, S. D., 23 May 2019, In: Physical Review Materials. 3, 5, 11 p., 054205.

    Research output: Contribution to journalArticlepeer-review

  10. Edge States and Capacitance of a 2D Topological Insulator

    Braginsky, L. S. & Entin, M. V., 1 Jun 2019, In: Physica Status Solidi (B) Basic Research. 256, 6, 4 p., 1800675.

    Research output: Contribution to journalArticlepeer-review

  11. Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    Sitnikov, S. V., Rodyakina, E. E. & Latyshev, A. V., 1 Jun 2019, In: Semiconductors. 53, 6, p. 795-799 5 p.

    Research output: Contribution to journalArticlepeer-review

ID: 3084764