Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films › Research Explorer

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Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1103/PhysRevMaterials.3.054205
Final published version

S. Candussio
G. V. Budkin
M. Otteneder
D. A. Kozlov
I. A. Dmitriev
V. V. Bel'Kov
Z. D. Kvon
N. N. Mikhailov
S. A. Dvoretsky
S. D. Ganichev

Original language	English
Article number	054205
Number of pages	11
Journal	Physical Review Materials
Volume	3
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevMaterials.3.054205
Publication status	Published - 23 May 2019

OECD FOS+WOS

Research areas

MISFIT, SPIN, DISLOCATIONS, GROWTH

ID: 20531662