1. 2017
  2. The charge trap density evolution in wake-up and fatigue modes of FRAM

    Islamov, D. R., Orlov, O. M., Gritsenko, V. A. & Krasnikov, G. J., 1 Jan 2017, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. Misra, D., DeGendt, S., Houssa, M., Kita, K. & Landheer, D. (eds.). 1 ed. Electrochemical Society, Inc., Vol. 80. p. 279-281 3 p. (ECS Transactions; vol. 80).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

  3. The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element

    Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Aliev, V. S., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V. & Chin, A., 1 Jan 2017, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Latyshev, AV., Dvurechenskii, AV. & Aseev, AL. (eds.). Elsevier Science Publishing Company, Inc., p. 493-504 12 p.

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

  4. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

    Zhuravlev, A. G. & Alperovich, V. L., 15 Feb 2017, In: Applied Surface Science. 395, p. 3-8 6 p.

    Research output: Contribution to journalArticlepeer-review

  5. Charge transport in thin hafnium and zirconium oxide films

    Islamov, D. R., Gritsenko, V. A. & Chin, A., 1 Mar 2017, In: Optoelectronics, Instrumentation and Data Processing. 53, 2, p. 184-189 6 p.

    Research output: Contribution to journalArticlepeer-review

  6. Detection of suspicious objects on the basis of analysis of human X-ray images

    Svitov, D. V., Kulikov, V. A. & Kosykh, V. P., 1 Mar 2017, In: Optoelectronics, Instrumentation and Data Processing. 53, 2, p. 159-164 6 p.

    Research output: Contribution to journalArticlepeer-review

  7. Local anodic oxidation of solid GeO films: The nanopatterning possibilities

    Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A. & Latyshev, A. V., 1 Mar 2017, In: Surfaces and Interfaces. 6, p. 56-59 4 p.

    Research output: Contribution to journalArticlepeer-review

  8. Splitting of frequencies of optical phonons in tensile-strained germanium layers

    Volodin, V. A., Timofeev, V. A., Tuktamyshev, A. R. & Nikiforov, A. I., 1 Mar 2017, In: JETP Letters. 105, 5, p. 327-331 5 p.

    Research output: Contribution to journalArticlepeer-review

  9. Valence-band offsets in strained SiGeSn/Si layers with different tin contents

    Bloshkin, A. A., Yakimov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Nikiforov, A. I. & Murashov, V. V., 1 Mar 2017, In: Semiconductors. 51, 3, p. 329-334 6 p.

    Research output: Contribution to journalArticlepeer-review

  10. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotcenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Latyshev, A. V., Iinuma, M. & Terai, Y., 21 Mar 2017, In: Journal of Applied Physics. 121, 11, 9 p., 113101.

    Research output: Contribution to journalArticlepeer-review

  11. Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

    Zhuravlev, A. G., Khoroshilov, V. S. & Alperovich, V. L., 1 May 2017, In: JETP Letters. 105, 10, p. 686-690 5 p.

    Research output: Contribution to journalArticlepeer-review

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