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Valence-band offsets in strained SiGeSn/Si layers with different tin contents

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782617030058
Final published version

A. A. Bloshkin
A. I. Yakimov
V. A. Timofeev
A. R. Tuktamyshev
A. I. Nikiforov
V. V. Murashov

Original language	English
Pages (from-to)	329-334
Number of pages	6
Journal	Semiconductors
Volume	51
Issue number	3
DOIs	https://doi.org/10.1134/S1063782617030058
Publication status	Published - 1 Mar 2017

Research areas

ASSEMBLED QUANTUM DOTS, HETEROSTRUCTURES, PHOTOCONDUCTIVITY, ALLOYS, GROWTH, SN

OECD FOS+WOS

ID: 10064659