TY - JOUR

T1 - Ultrafast Infrared Laser Crystallization of Amorphous Ge Films on Glass Substrates

AU - Cheng, Yuzhu

AU - Bulgakov, Alexander V

AU - Bulgakova, Nadezhda M

AU - Beránek, Jiří

AU - Zukerstein, Martin

AU - Milekhin, Ilya A

AU - Popov, Alexander A

AU - Volodin, Vladimir A

N1 - The study of V.A.V. and Y.C. was supported by the Ministry of Science and Higher Education of the Russian Federation, grant no. 075-15-2020-797 (13.1902.21.0024). A.V.B., J.B., M.Z. and N.M.B. acknowledge the support of the European Regional Development Fund and the state budget of the Czech Republic (project BIATRI: no. CZ.02.1.01/0.0/0.0/15_003/0000445). J.B. also acknowledges the support of the Grant Agency of the Czech Technical University in Prague, grant no. SGS23/188/OHK4/3T/14. Публикация для корректировки.

PY - 2023/10/31

Y1 - 2023/10/31

N2 - Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses. Crystallization of germanium irradiated at a laser energy density (fluence) range from 25 to 400 mJ/cm2 under single-shot and multishot conditions was investigated using Raman spectroscopy. The dependence of the fraction of the crystalline phase on the fluence was obtained for picosecond and femtosecond laser annealing. The regimes of almost complete crystallization of germanium films over the entire thickness were obtained (from the analysis of Raman spectra with excitation of 785 nm laser). The possibility of scanning laser processing is shown, which can be used to create films of micro- and nanocrystalline germanium on flexible substrates.

AB - Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses. Crystallization of germanium irradiated at a laser energy density (fluence) range from 25 to 400 mJ/cm2 under single-shot and multishot conditions was investigated using Raman spectroscopy. The dependence of the fraction of the crystalline phase on the fluence was obtained for picosecond and femtosecond laser annealing. The regimes of almost complete crystallization of germanium films over the entire thickness were obtained (from the analysis of Raman spectra with excitation of 785 nm laser). The possibility of scanning laser processing is shown, which can be used to create films of micro- and nanocrystalline germanium on flexible substrates.

UR - https://www.mendeley.com/catalogue/56951c6b-3f32-3772-bd79-3e5f3a65e890/

U2 - 10.3390/mi14112048

DO - 10.3390/mi14112048

M3 - Article

C2 - 38004906

VL - 14

JO - Micromachines

JF - Micromachines

SN - 2072-666X

IS - 11

M1 - 2048

ER -