TY - JOUR

T1 - Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition

AU - Perevalov, T. V.

AU - Volodin, V. A.

AU - Novikov, Yu. N.

AU - Kamaev, G. N.

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

PY - 2019/12

Y1 - 2019/12

N2 - This work was devoted to studying the atomic structure and electron spectrum of a-SiOx : H films created on silicon and glass substrates by means of plasma-enhanced chemical vapor deposition (PECVD). Depending on the conditions of oxygen supply into the reactor, the stoichiometric parameter x of the films was varied from 0.57 to 2. The structure of the films and the specific features of their electron structure were characterized depending on the parameter x with a complex of structural and optical methods and ab initio quantum-chemical simulation for the model SiOx structure. The studied SiOx : H films were established to consist predominantly of silicon suboxides SiOy, SiO2 clusters, and amorphous silicon. Based on the spatial fluctuations of their chemical composition, the model of bandgap width and potential fluctuations was proposed for SiOx electrons and holes. The obtained data would provide the charge transport in a-SiOx : H films with more precise modeling important for the creation of nonvolatile random-access memory (RAM) elements and memristors on their basis.

AB - This work was devoted to studying the atomic structure and electron spectrum of a-SiOx : H films created on silicon and glass substrates by means of plasma-enhanced chemical vapor deposition (PECVD). Depending on the conditions of oxygen supply into the reactor, the stoichiometric parameter x of the films was varied from 0.57 to 2. The structure of the films and the specific features of their electron structure were characterized depending on the parameter x with a complex of structural and optical methods and ab initio quantum-chemical simulation for the model SiOx structure. The studied SiOx : H films were established to consist predominantly of silicon suboxides SiOy, SiO2 clusters, and amorphous silicon. Based on the spatial fluctuations of their chemical composition, the model of bandgap width and potential fluctuations was proposed for SiOx electrons and holes. The obtained data would provide the charge transport in a-SiOx : H films with more precise modeling important for the creation of nonvolatile random-access memory (RAM) elements and memristors on their basis.

KW - silica (SiO2)

KW - Raman scattering

KW - X-ray photoelectron spectroscopy

KW - high-resolution transmission electron microscopy

KW - plasma enhanced chemical vapor deposition

KW - resistive random-access memory

KW - ELECTRONIC-STRUCTURES

KW - AMORPHOUS SI

KW - SILICON

KW - PHOTOEMISSION

KW - DEFECTS

U2 - 10.1134/S1063783419120370

DO - 10.1134/S1063783419120370

M3 - Article

VL - 61

SP - 2560

EP - 2568

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 12

ER -