Research output: Contribution to journal › Article › peer-review
Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition. / Perevalov, T. V.; Volodin, V. A.; Novikov, Yu. N. et al.
In: Physics of the Solid State, Vol. 61, No. 12, 12.2019, p. 2560-2568.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Nanosized Potential Fluctuations in SiOx Synthesized by Plasma-Enhanced Chemical Vapor Deposition
AU - Perevalov, T. V.
AU - Volodin, V. A.
AU - Novikov, Yu. N.
AU - Kamaev, G. N.
AU - Gritsenko, V. A.
AU - Prosvirin, I. P.
PY - 2019/12
Y1 - 2019/12
N2 - This work was devoted to studying the atomic structure and electron spectrum of a-SiOx : H films created on silicon and glass substrates by means of plasma-enhanced chemical vapor deposition (PECVD). Depending on the conditions of oxygen supply into the reactor, the stoichiometric parameter x of the films was varied from 0.57 to 2. The structure of the films and the specific features of their electron structure were characterized depending on the parameter x with a complex of structural and optical methods and ab initio quantum-chemical simulation for the model SiOx structure. The studied SiOx : H films were established to consist predominantly of silicon suboxides SiOy, SiO2 clusters, and amorphous silicon. Based on the spatial fluctuations of their chemical composition, the model of bandgap width and potential fluctuations was proposed for SiOx electrons and holes. The obtained data would provide the charge transport in a-SiOx : H films with more precise modeling important for the creation of nonvolatile random-access memory (RAM) elements and memristors on their basis.
AB - This work was devoted to studying the atomic structure and electron spectrum of a-SiOx : H films created on silicon and glass substrates by means of plasma-enhanced chemical vapor deposition (PECVD). Depending on the conditions of oxygen supply into the reactor, the stoichiometric parameter x of the films was varied from 0.57 to 2. The structure of the films and the specific features of their electron structure were characterized depending on the parameter x with a complex of structural and optical methods and ab initio quantum-chemical simulation for the model SiOx structure. The studied SiOx : H films were established to consist predominantly of silicon suboxides SiOy, SiO2 clusters, and amorphous silicon. Based on the spatial fluctuations of their chemical composition, the model of bandgap width and potential fluctuations was proposed for SiOx electrons and holes. The obtained data would provide the charge transport in a-SiOx : H films with more precise modeling important for the creation of nonvolatile random-access memory (RAM) elements and memristors on their basis.
KW - silica (SiO2)
KW - Raman scattering
KW - X-ray photoelectron spectroscopy
KW - high-resolution transmission electron microscopy
KW - plasma enhanced chemical vapor deposition
KW - resistive random-access memory
KW - ELECTRONIC-STRUCTURES
KW - AMORPHOUS SI
KW - SILICON
KW - PHOTOEMISSION
KW - DEFECTS
U2 - 10.1134/S1063783419120370
DO - 10.1134/S1063783419120370
M3 - Article
VL - 61
SP - 2560
EP - 2568
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 12
ER -
ID: 23719858