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Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam. / Коробейщиков, Николай Геннадьевич; Николаев, Иван Владимирович; Лапега, Алина Витальевна.

в: Materials Letters, Том 368, 136710, 01.08.2024.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Коробейщиков, НГ, Николаев, ИВ & Лапега, АВ 2024, 'Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam', Materials Letters, Том. 368, 136710. https://doi.org/10.1016/j.matlet.2024.136710

APA

Коробейщиков, Н. Г., Николаев, И. В., & Лапега, А. В. (2024). Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam. Materials Letters, 368, [136710]. https://doi.org/10.1016/j.matlet.2024.136710

Vancouver

Коробейщиков НГ, Николаев ИВ, Лапега АВ. Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam. Materials Letters. 2024 авг. 1;368:136710. doi: 10.1016/j.matlet.2024.136710

Author

Коробейщиков, Николай Геннадьевич ; Николаев, Иван Владимирович ; Лапега, Алина Витальевна. / Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam. в: Materials Letters. 2024 ; Том 368.

BibTeX

@article{9803d421509e4cd0813ea6ccf36e5982,
title = "Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam",
abstract = "The evolution of the self-assembled nanostructures formed on the Ge (1 0 0) surface as a result of sputtering by an obliquely incident argon cluster ion beam is studied. The bombardment was carried out with Ar1000+ ions at energy of 10 keV and angle of incidence of 60˚ from the normal while varying the ion fluence from 8 × 1014 up to 2 × 1016 ions/cm2. It is found that parallel-mode ordered ripples with significant aspect ratios can be produced on the Ge surface at a minimum sputtering depth. Such nanostructures have not previously been formed on the Ge surface with conventional argon ions. Our findings prove that argon cluster ion beam is effective for nanopatterning the surface of single-component semiconductors.",
keywords = "Gas cluster ion beam, Germanium, Ion sputtering, Nanoripples, Surface nanopatterning",
author = "Коробейщиков, {Николай Геннадьевич} and Николаев, {Иван Владимирович} and Лапега, {Алина Витальевна}",
note = "This work was funded by the Russian Science Foundation under grant No. 23–79–10061.",
year = "2024",
month = aug,
day = "1",
doi = "10.1016/j.matlet.2024.136710",
language = "English",
volume = "368",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Efficient nanopatterning of Ge surface induced by oblique argon cluster ion beam

AU - Коробейщиков, Николай Геннадьевич

AU - Николаев, Иван Владимирович

AU - Лапега, Алина Витальевна

N1 - This work was funded by the Russian Science Foundation under grant No. 23–79–10061.

PY - 2024/8/1

Y1 - 2024/8/1

N2 - The evolution of the self-assembled nanostructures formed on the Ge (1 0 0) surface as a result of sputtering by an obliquely incident argon cluster ion beam is studied. The bombardment was carried out with Ar1000+ ions at energy of 10 keV and angle of incidence of 60˚ from the normal while varying the ion fluence from 8 × 1014 up to 2 × 1016 ions/cm2. It is found that parallel-mode ordered ripples with significant aspect ratios can be produced on the Ge surface at a minimum sputtering depth. Such nanostructures have not previously been formed on the Ge surface with conventional argon ions. Our findings prove that argon cluster ion beam is effective for nanopatterning the surface of single-component semiconductors.

AB - The evolution of the self-assembled nanostructures formed on the Ge (1 0 0) surface as a result of sputtering by an obliquely incident argon cluster ion beam is studied. The bombardment was carried out with Ar1000+ ions at energy of 10 keV and angle of incidence of 60˚ from the normal while varying the ion fluence from 8 × 1014 up to 2 × 1016 ions/cm2. It is found that parallel-mode ordered ripples with significant aspect ratios can be produced on the Ge surface at a minimum sputtering depth. Such nanostructures have not previously been formed on the Ge surface with conventional argon ions. Our findings prove that argon cluster ion beam is effective for nanopatterning the surface of single-component semiconductors.

KW - Gas cluster ion beam

KW - Germanium

KW - Ion sputtering

KW - Nanoripples

KW - Surface nanopatterning

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85194162622&origin=inward&txGid=5e2f48d3b6f749d9d60fdc71c30040b7

UR - https://www.mendeley.com/catalogue/9f2c2e7c-692a-38bf-be75-2efdb2c29a62/

U2 - 10.1016/j.matlet.2024.136710

DO - 10.1016/j.matlet.2024.136710

M3 - Article

VL - 368

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 136710

ER -

ID: 60095384