TY - JOUR

T1 - Study of the Lattice Structure and Sound Velocity in AlN Films on a Silicon Substrate for the Development of Acoustic Resonators

AU - Bogoslovtseva, A. L.

AU - Shevchenko, O. N.

AU - Nikolaev, N. A.

AU - Rybak, A. A.

AU - Gribanov, D. S.

AU - Adishchev, S. V.

AU - Dobrynina, E. A.

AU - Chepkasov, S. Yu

AU - Geydt, P. V.

N1 - Study of the Lattice Structure and Sound Velocity in AlN Films on a Silicon Substrate for the Development of Acoustic Resonators / A. L. Bogoslovtseva, O. N. Shevchenko, N. A. Nikolaev [et al.] // Optoelectronics, Instrumentation and Data Processing. – 2026. – Vol. 62, No. 1. – P. 54-62. – DOI 10.3103/S875669902670007X. – EDN UXATCN. This work was supported by the Ministry of Science and Higher Education of the Russian Federation through the state assignment projects of the Novosibirsk State University (FSUS-2024-0020) and the Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences (FWNG-2024-0023).

PY - 2026/6/11

Y1 - 2026/6/11

N2 - This work is devoted to the study of acoustic phonon scattering in aluminum nitride (AlN) thin films grown by magnetron sputtering with an emphasis on their potential application as piezoactive layers for microwave resonators. The main objective of the work is to establish a correlation between the data obtained by various analytical methods, including Mandelstam–Brillouin scattering (MBS), Raman scattering (RS), infrared (IR), and terahertz time-domain spectroscopy (THz-TDS), as well as X-ray diffraction (XRD) to assess the quality and homogeneity of AlN films. The data analysis has confirmed a high stability of the MBS peaks in the studied films. It has been found that the stability of the MBS phonon peak reaches () GHz, which corresponds to the literature data and confirms the homogeneity of the films with an error of less than 1. The presence of a specific peak in the XRD patterns and the minimum width of the phonon peak obtained by RS and Fourier-transform infrared (FTIR) spectroscopy confirm the possibility of using these methods to characterize such micron-thick films. Considering that the peak frequency of the phonon resonance did not change for the films with a thickness of 4.5 m, it is assumed that the analysis of the phonon line width may be sufficient to evaluate the grown films. The RS method seems to be especially promising, which in the future can allow in situ analysis during the growth of AlN films. The AlN films with a thickness of less than 7 m have the quality sufficient for the development of multilayer acoustic microwave resonators, which opens the way for the experimental creation of multilayer structures with different acoustic impedances based on the data obtained.

AB - This work is devoted to the study of acoustic phonon scattering in aluminum nitride (AlN) thin films grown by magnetron sputtering with an emphasis on their potential application as piezoactive layers for microwave resonators. The main objective of the work is to establish a correlation between the data obtained by various analytical methods, including Mandelstam–Brillouin scattering (MBS), Raman scattering (RS), infrared (IR), and terahertz time-domain spectroscopy (THz-TDS), as well as X-ray diffraction (XRD) to assess the quality and homogeneity of AlN films. The data analysis has confirmed a high stability of the MBS peaks in the studied films. It has been found that the stability of the MBS phonon peak reaches () GHz, which corresponds to the literature data and confirms the homogeneity of the films with an error of less than 1. The presence of a specific peak in the XRD patterns and the minimum width of the phonon peak obtained by RS and Fourier-transform infrared (FTIR) spectroscopy confirm the possibility of using these methods to characterize such micron-thick films. Considering that the peak frequency of the phonon resonance did not change for the films with a thickness of 4.5 m, it is assumed that the analysis of the phonon line width may be sufficient to evaluate the grown films. The RS method seems to be especially promising, which in the future can allow in situ analysis during the growth of AlN films. The AlN films with a thickness of less than 7 m have the quality sufficient for the development of multilayer acoustic microwave resonators, which opens the way for the experimental creation of multilayer structures with different acoustic impedances based on the data obtained.

KW - AlN

KW - Raman scattering

KW - infrared spectroscopy

KW - sound velocity

KW - terahertz time-domain spectroscopy

KW - терагерцовая спектроскопия во временной области

KW - инфракрасная спектроскопия

KW - скорость звука

KW - AlN

KW - комбинационное рассеяние света

UR - https://www.mendeley.com/catalogue/bc7a19e4-a9e9-3f49-8247-278d9b7765ca/

UR - https://www.scopus.com/pages/publications/105041668305

UR - https://elibrary.ru/item.asp?id=91554929

U2 - 10.3103/S875669902670007X

DO - 10.3103/S875669902670007X

M3 - Article

VL - 62

SP - 54

EP - 62

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 1

ER -