Research output: Contribution to journal › Article › peer-review
Resistive switching in non-stoichiometric germanosilicate glass films containing ge nanoclusters. / Volodin, Vladimir A.; Geydt, Pavel; Kamaev, Gennadiy N. et al.
In: Electronics (Switzerland), Vol. 9, No. 12, 2103, 12.2020, p. 1-17.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Resistive switching in non-stoichiometric germanosilicate glass films containing ge nanoclusters
AU - Volodin, Vladimir A.
AU - Geydt, Pavel
AU - Kamaev, Gennadiy N.
AU - Gismatulin, Andrei A.
AU - Krivyakin, Grigory K.
AU - Prosvirin, Igor P.
AU - Azarov, Ivan A.
AU - Fan, Zhang
AU - Vergnat, Michel
N1 - Funding Information: This work was supported by the Ministry of Education and Science of the Russian Federation, grant and LRS. FSUS-2020-0029, The studied while memristors XPS and can I-V be curve used analysis for the was simulation done with of financial prospective support neuromorphic of the grant 075-15-2020-797devices. (13.1902.21.0024). The Raman spectroscopy and TEM were done on the equipment of CKP ?VTAN? in the ATRC department of NSU. Publisher Copyright: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/12
Y1 - 2020/12
N2 - Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500◦C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSixOy) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO2] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science.
AB - Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500◦C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSixOy) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO2] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science.
KW - Ge nanoclusters
KW - Germanosilicate glass
KW - Memristor
KW - Resistance states
KW - Thin films
KW - SIOX FILMS
KW - resistance states
KW - memristor
KW - NANOCRYSTALS
KW - OPTICAL-PROPERTIES
KW - germanosilicate glass
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85097439976&partnerID=8YFLogxK
U2 - 10.3390/electronics9122103
DO - 10.3390/electronics9122103
M3 - Article
AN - SCOPUS:85097439976
VL - 9
SP - 1
EP - 17
JO - Electronics (Switzerland)
JF - Electronics (Switzerland)
SN - 2079-9292
IS - 12
M1 - 2103
ER -
ID: 26702365