TY - JOUR

T1 - Resistive switching in non-stoichiometric germanosilicate glass films containing ge nanoclusters

AU - Volodin, Vladimir A.

AU - Geydt, Pavel

AU - Kamaev, Gennadiy N.

AU - Gismatulin, Andrei A.

AU - Krivyakin, Grigory K.

AU - Prosvirin, Igor P.

AU - Azarov, Ivan A.

AU - Fan, Zhang

AU - Vergnat, Michel

N1 - Funding Information: This work was supported by the Ministry of Education and Science of the Russian Federation, grant and LRS. FSUS-2020-0029, The studied while memristors XPS and can I-V be curve used analysis for the was simulation done with of financial prospective support neuromorphic of the grant 075-15-2020-797devices. (13.1902.21.0024). The Raman spectroscopy and TEM were done on the equipment of CKP ?VTAN? in the ATRC department of NSU. Publisher Copyright: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/12

Y1 - 2020/12

N2 - Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500◦C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSixOy) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO2] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science.

AB - Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500◦C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSixOy) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO2] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science.

KW - Ge nanoclusters

KW - Germanosilicate glass

KW - Memristor

KW - Resistance states

KW - Thin films

KW - SIOX FILMS

KW - resistance states

KW - memristor

KW - NANOCRYSTALS

KW - OPTICAL-PROPERTIES

KW - germanosilicate glass

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85097439976&partnerID=8YFLogxK

U2 - 10.3390/electronics9122103

DO - 10.3390/electronics9122103

M3 - Article

AN - SCOPUS:85097439976

VL - 9

SP - 1

EP - 17

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

SN - 2079-9292

IS - 12

M1 - 2103

ER -