TY - JOUR

T1 - Peculiarities of the Processing of Polycrystalline AlN Films on Glass-Ceramic and Si Substrates by Argon Cluster Ions

AU - Николаев, Иван Владимирович

AU - Коробейщиков, Николай Геннадьевич

AU - Гейдт, Павел Викторович

AU - Chirikov, Nikita

AU - Струнин, Владимир Иванович

N1 - Funding Information: The study was carried out using equipment of the Center for Collective Use “Applied Physics,” Novosibirsk State University with financial support of the Russian Science Foundation (grant no. 21-19-00046) in terms of processing the samples with cluster ions and analysis, and the Ministry of Education and Science of the Russian Federation (grant FSUS-2020-0029) in terms of sample preparation and analysis. Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/8/3

Y1 - 2022/8/3

N2 - The peculiarities of the surface processing of polycrystalline aluminum-nitride films on glass-ceramic and silicon substrates grown under identical conditions are considered. Aluminum-nitride films are obtained using the magnetron sputtering of a pure aluminum target (99.99%) in nitrogen–argon plasma at a magnetron power of 700 W. The consumption of working gases is 10 sccm for nitrogen and 4 sccm for argon. The film thickness is determined using a quartz resonator inside the chamber of the magnetron setup. Atomic force microscopy is used to study the surface relief of the targets before and after treatment by argon cluster ions. Small single crystallites are shown to grow on the initial surfaces, the lateral size of which is in the range of 250–550 nm. The depth of target etching by argon cluster ions is determined. Cluster ions with low energy per atom are shown to have a high efficiency of surface smoothing. A comparison of the surface morphology and surface-roughness parameters of aluminum nitride on different substrates obtained using atomic force microscopy is carried out. It is shown that aluminum nitride on silicon is smoothed more efficiently than on a glass-ceramic substrate.

AB - The peculiarities of the surface processing of polycrystalline aluminum-nitride films on glass-ceramic and silicon substrates grown under identical conditions are considered. Aluminum-nitride films are obtained using the magnetron sputtering of a pure aluminum target (99.99%) in nitrogen–argon plasma at a magnetron power of 700 W. The consumption of working gases is 10 sccm for nitrogen and 4 sccm for argon. The film thickness is determined using a quartz resonator inside the chamber of the magnetron setup. Atomic force microscopy is used to study the surface relief of the targets before and after treatment by argon cluster ions. Small single crystallites are shown to grow on the initial surfaces, the lateral size of which is in the range of 250–550 nm. The depth of target etching by argon cluster ions is determined. Cluster ions with low energy per atom are shown to have a high efficiency of surface smoothing. A comparison of the surface morphology and surface-roughness parameters of aluminum nitride on different substrates obtained using atomic force microscopy is carried out. It is shown that aluminum nitride on silicon is smoothed more efficiently than on a glass-ceramic substrate.

KW - aluminum nitride

KW - atomic force microscopy

KW - cluster ion beam

KW - etching

KW - parameters of roughness

KW - polycrystalline thin films

KW - surface morphology

KW - surface smoothing

UR - http://www.scopus.com/inward/record.url?scp=85135524445&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/55a6d7bd-3bc6-37f7-b0ed-1ae03f3bd5cc/

U2 - 10.1134/S1027451022040152

DO - 10.1134/S1027451022040152

M3 - Article

VL - 16

SP - 480

EP - 483

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 4

ER -