Research output: Contribution to journal › Article › peer-review
Optical Properties of the SiO x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide. / Kruchinin, V. N.; Perevalov, T. V.; Aliev, V. Sh et al.
In: Optics and Spectroscopy, Vol. 128, No. 10, 01.10.2020, p. 1577-1582.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Optical Properties of the SiO x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide
AU - Kruchinin, V. N.
AU - Perevalov, T. V.
AU - Aliev, V. Sh
AU - Iskhakzai, R. M.Kh
AU - Spesivtsev, E. V.
AU - Gritsenko, V. A.
AU - Pustovarov, V. A.
N1 - Publisher Copyright: © 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/10/1
Y1 - 2020/10/1
N2 - The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found that the plasma processing of the films leads to their oxygen depletion and the formation of nonstoichiometric oxide SiOx < 2. The parameter x of the obtained SiOx films has been determined by comparing the experimental spectral dependence of the refractive index with the dependence obtained theoretically using the ab initio calculation. It is shown that an increase in the time of processing of thermal dioxide SiO2 in a hydrogen plasma leads to an increase in the refractive index of the film, as well as in the degree of its oxygen depletion. The dependence of the parameter x of the investigated films on the hydrogen plasma processing time is plotted.
AB - The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found that the plasma processing of the films leads to their oxygen depletion and the formation of nonstoichiometric oxide SiOx < 2. The parameter x of the obtained SiOx films has been determined by comparing the experimental spectral dependence of the refractive index with the dependence obtained theoretically using the ab initio calculation. It is shown that an increase in the time of processing of thermal dioxide SiO2 in a hydrogen plasma leads to an increase in the refractive index of the film, as well as in the degree of its oxygen depletion. The dependence of the parameter x of the investigated films on the hydrogen plasma processing time is plotted.
KW - ellipsometry
KW - photoluminescence
KW - quantum-chemical modeling
KW - silicon oxide
KW - OXYGEN-DEFICIENT CENTERS
KW - LUMINESCENCE
KW - ELLIPSOMETRY
UR - http://www.scopus.com/inward/record.url?scp=85095693647&partnerID=8YFLogxK
U2 - 10.1134/S0030400X20100173
DO - 10.1134/S0030400X20100173
M3 - Article
AN - SCOPUS:85095693647
VL - 128
SP - 1577
EP - 1582
JO - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)
JF - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)
SN - 0030-400X
IS - 10
ER -
ID: 26004474