Optical Properties of the SiO x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide

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Optical Properties of the SiO_x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide. / Kruchinin, V. N.; Perevalov, T. V.; Aliev, V. Sh и др.

в: Optics and Spectroscopy, Том 128, № 10, 01.10.2020, стр. 1577-1582.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kruchinin, VN, Perevalov, TV, Aliev, VS, Iskhakzai, RMK, Spesivtsev, EV, Gritsenko, VA & Pustovarov, VA 2020, 'Optical Properties of the SiO_x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide', Optics and Spectroscopy, Том. 128, № 10, стр. 1577-1582. https://doi.org/10.1134/S0030400X20100173

APA

Kruchinin, V. N., Perevalov, T. V., Aliev, V. S., Iskhakzai, R. M. K., Spesivtsev, E. V., Gritsenko, V. A., & Pustovarov, V. A. (2020). Optical Properties of the SiO_x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide. Optics and Spectroscopy, 128(10), 1577-1582. https://doi.org/10.1134/S0030400X20100173

Vancouver

Kruchinin VN, Perevalov TV, Aliev VS, Iskhakzai RMK, Spesivtsev EV, Gritsenko VA и др. Optical Properties of the SiO_x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide. Optics and Spectroscopy. 2020 окт. 1;128(10):1577-1582. doi: 10.1134/S0030400X20100173

Author

Kruchinin, V. N. ; Perevalov, T. V. ; Aliev, V. Sh и др. / Optical Properties of the SiO_x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide. в: Optics and Spectroscopy. 2020 ; Том 128, № 10. стр. 1577-1582.

BibTeX

@article{ea433f2468854369aa265ee254fd7f39,

title = "Optical Properties of the SiO x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide",

abstract = "The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found that the plasma processing of the films leads to their oxygen depletion and the formation of nonstoichiometric oxide SiOx < 2. The parameter x of the obtained SiOx films has been determined by comparing the experimental spectral dependence of the refractive index with the dependence obtained theoretically using the ab initio calculation. It is shown that an increase in the time of processing of thermal dioxide SiO2 in a hydrogen plasma leads to an increase in the refractive index of the film, as well as in the degree of its oxygen depletion. The dependence of the parameter x of the investigated films on the hydrogen plasma processing time is plotted.",

keywords = "ellipsometry, photoluminescence, quantum-chemical modeling, silicon oxide, OXYGEN-DEFICIENT CENTERS, LUMINESCENCE, ELLIPSOMETRY",

author = "Kruchinin, {V. N.} and Perevalov, {T. V.} and Aliev, {V. Sh} and Iskhakzai, {R. M.Kh} and Spesivtsev, {E. V.} and Gritsenko, {V. A.} and Pustovarov, {V. A.}",

year = "2020",

month = oct,

day = "1",

doi = "10.1134/S0030400X20100173",

language = "English",

volume = "128",

pages = "1577--1582",

journal = "Optics and Spectroscopy (English translation of Optika i Spektroskopiya)",

issn = "0030-400X",

publisher = "Maik Nauka Publishing / Springer SBM",

number = "10",

}

RIS

TY - JOUR

T1 - Optical Properties of the SiO x (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide

AU - Kruchinin, V. N.

AU - Perevalov, T. V.

AU - Aliev, V. Sh

AU - Iskhakzai, R. M.Kh

AU - Spesivtsev, E. V.

AU - Gritsenko, V. A.

AU - Pustovarov, V. A.

PY - 2020/10/1

Y1 - 2020/10/1

N2 - The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found that the plasma processing of the films leads to their oxygen depletion and the formation of nonstoichiometric oxide SiOx < 2. The parameter x of the obtained SiOx films has been determined by comparing the experimental spectral dependence of the refractive index with the dependence obtained theoretically using the ab initio calculation. It is shown that an increase in the time of processing of thermal dioxide SiO2 in a hydrogen plasma leads to an increase in the refractive index of the film, as well as in the degree of its oxygen depletion. The dependence of the parameter x of the investigated films on the hydrogen plasma processing time is plotted.

AB - The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found that the plasma processing of the films leads to their oxygen depletion and the formation of nonstoichiometric oxide SiOx < 2. The parameter x of the obtained SiOx films has been determined by comparing the experimental spectral dependence of the refractive index with the dependence obtained theoretically using the ab initio calculation. It is shown that an increase in the time of processing of thermal dioxide SiO2 in a hydrogen plasma leads to an increase in the refractive index of the film, as well as in the degree of its oxygen depletion. The dependence of the parameter x of the investigated films on the hydrogen plasma processing time is plotted.

KW - ellipsometry

KW - photoluminescence

KW - quantum-chemical modeling

KW - silicon oxide

KW - OXYGEN-DEFICIENT CENTERS

KW - LUMINESCENCE

KW - ELLIPSOMETRY

UR - http://www.scopus.com/inward/record.url?scp=85095693647&partnerID=8YFLogxK

U2 - 10.1134/S0030400X20100173

DO - 10.1134/S0030400X20100173

M3 - Article

AN - SCOPUS:85095693647

VL - 128

SP - 1577

EP - 1582

JO - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

JF - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

SN - 0030-400X

IS - 10

ER -

ID: 26004474